Characterization and Benchmark of a Novel Capacitive and Fluidic Inclination Sensor

In this paper, a fluidic capacitive inclination sensor is presented and compared to three types of silicon-based microelectromechanical system (MEMS) accelerometers. MEMS accelerometers are commonly used for tilt measurement. They can only be manufactured by large companies with clean-room technology due to the high requirements during assembly. In contrast, the fluidic sensor can be produced by small- and medium-sized enterprises (SMEs) as well, since only surface mount technologies (SMT) are required. Three different variants of the fluidic sensor were investigated. Two variants using stacked printed circuit boards (PCBs) and one variant with 3D-molded interconnect devices (MIDs) to form the sensor element are presented. Allan deviation, non-repeatability, hysteresis, and offset temperature stability were measured to compare the sensors. Within the fluidic sensors, the PCB variant with two sensor cavities performed best regarding all the measurement results except non-repeatability. Regarding bias stability, white noise, which was determined from the Allan deviation, and hysteresis, the fluidic sensors outperformed the MEMS-based sensors. The accelerometer Analog Devices ADXL355 offers slightly better results regarding offset temperature stability and non-repeatability. The MEMS sensors Bosch BMA280 and TDK InvenSense MPU6500 do not match the performance of fluidic sensors in any category. Their advantages are the favorable price and the smaller package. From the investigations, it can be concluded that the fluidic sensor is competitive in the targeted price range, especially for applications with extended requirements regarding bias stability, noise, and hysteresis.

Effect of HfO2-Based Multi-Dielectrics on Electrical Properties of Amorphous In-Ga-Zn-O Thin Film Transistors

We report the fabrication of bottom gate a-IGZO TFTs based on HfO2 stacked dielectrics with decent electrical characteristics and bias stability. The microscopic, electrical, and optical properties of room temperature deposited a-IGZO film with varied oxygen content were explored. In order to suppress the bulk defects in the HfO2 thin film and hence maximize the quality, surface modification of the SiNx film was investigated so as to achieve a more uniform layer. The root mean square (RMS) roughness of SiNx/HfO2/SiNx (SHS) stacked dielectrics was only 0.66 nm, which was reduced by 35% compared with HfO2 single film (1.04 nm). The basic electrical characteristics of SHS-based a-IGZO TFT were as follows: Vth is 2.4 V, μsat is 21.1 cm2 V−1 s−1, Ion/Ioff of 3.3 × 107, Ioff is 10−11 A, and SS is 0.22 V/dec. Zr-doped HfO2 could form a more stable surface, which will decrease the bulk defect states so that the stability of device can be improved. It was found that the electrical characteristics were improved after Zr doping, with a Vth of 1.4 V, Ion/Ioff of 108, μsat of 19.5 cm2 V−1 s−1, Ioff of 10−12 A, SS of 0.18 V/dec. After positive gate bias stress of 104 s, the ΔVth was decreased from 0.43 V (without Zr doping) to 0.09 V (with Zr doping), the ΔSS was decreased from 0.19 V/dec to 0.057 V/dec, respectively, which shows a meaningful impact to realize the long-term working stability of TFT devices.

Design and Optimization of the Resonator in a Resonant Accelerometer Based on Mode and Frequency Analysis

This study aims to develop methods to design and optimize the resonator in a resonant accelerometer based on mode and frequency analysis. First, according to the working principle of a resonant accelerometer, the resonator is divided into three parts: beam I, beam II, and beam III. Using Hamilton’s principle, the undamped dynamic control equation and the ordinary differential dynamic equation of the resonant beam are obtained. Moreover, the structural parameters of the accelerometer are designed and optimized by using resonator mode and frequency analysis, then using finite element simulation to verify it. Finally, 1 g acceleration tumbling experiments are built to verify the feasibility of the proposed design and optimization method. The experimental results demonstrate that the proposed accelerometer has a sensitivity of 98 Hz/g, a resolution of 0.917 mg, and a bias stability of 1.323 mg/h. The research findings suggest that according to the resonator mode and frequency analysis, the values of the resonator structural parameters are determined so that the working mode of the resonator is far away from the interference mode and avoids resonance points effectively. The research results are expected to be beneficial for a practical resonant sensor design.

A Novel Fabrication Method for a Capacitive MEMS Accelerometer Based on Glass–Silicon Composite Wafers

In this paper, we report a novel teeter-totter type accelerometer based on glass-silicon composite wafers. Unlike the ordinary micro-electro-mechanical systems (MEMS) accelerometers, the entire structure of the accelerometer, includes the mass, the springs, and the composite wafer. The composite wafer is expected to serve as the electrical feedthrough and the fixed capacitance plate at the same time, to simplify the fabrication process, and to save on chip area. It is manufactured by filling melted borosilicate glass into an etched silicon wafer and polishing the wafer flat. A sensitivity of 51.622 mV/g in the range of ±5 g (g = 9.8 m/s2), a zero-bias stability under 0.2 mg, and the noise floor with 11.28 µg/√Hz were obtained, which meet the needs of most acceleration detecting applications. The micromachining solution is beneficial for vertical interconnection and miniaturization of MEMS devices.