Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2043179 ◽

2010 ◽

Vol 57 (5) ◽

pp. 1009-1014 ◽

Author(s):

Yong-Hoon Kim ◽

Min-Koo Han ◽

Jeong-In Han ◽

Sung Kyu Park

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Solution Processed ◽

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Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y2O3 passivation

Applied Physics Letters ◽

10.1063/1.4892541 ◽

2014 ◽

Vol 105 (5) ◽

pp. 053507 ◽

Author(s):

Sungjin An ◽

Mallory Mativenga ◽

Youngoo Kim ◽

Jin Jang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Solution Processed ◽

Bias Stability ◽

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Effects of helium annealing in low-temperature and solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

AIP Advances ◽

10.1063/1.5092642 ◽

2019 ◽

Vol 9 (4) ◽

pp. 045228 ◽

Author(s):

Jeongmin Kim ◽

Ikjun Jang ◽

Jaewook Jeong

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Solution Processed ◽

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Electrical Properties and Stability of Dual-Gate Coplanar Homojunction DC Sputtered Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistors and Its Application to AM-OLEDs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2168528 ◽

2011 ◽

Vol 58 (12) ◽

pp. 4344-4353 ◽

Author(s):

Gwanghyeon Baek ◽

Katsumi Abe ◽

Alex Kuo ◽

Hideya Kumomi ◽

Jerzy Kanicki

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Dual Gate ◽

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The Impact of Solvents on the Performances of Solution‐Processed Indium Gallium Zinc Oxide Thin‐Film Transistors Using Nitrate Ligands

Advanced Engineering Materials ◽

10.1002/adem.201901053 ◽

2019 ◽

Vol 22 (2) ◽

pp. 1901053 ◽

Author(s):

Saravanan Kumaran ◽

Meng-Tieh Liu ◽

Kung-Yen Lee ◽

Yian Tai

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Solution Processed ◽

Indium Gallium ◽

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Effect of Single-Walled Carbon Nanotube Concentration on the Electrical Properties of Solution-Based Indium Gallium Zinc Oxide Thin Film Transistors

Molecular Crystals and Liquid Crystals ◽

10.1080/15421400903058668 ◽

2009 ◽

Vol 510 (1) ◽

pp. 87/[1221]-95/[1229] ◽

Author(s):

Kon Yi Heo ◽

Keun Woo Lee ◽

Sang Hoon Oh ◽

Gun Hee Kim ◽

Abderrafia Moujoud ◽

...

Keyword(s):

Thin Film ◽

Carbon Nanotube ◽

Electrical Properties ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Single Walled Carbon Nanotube ◽

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Short time helium annealing for solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

AIP Advances ◽

10.1063/1.5040019 ◽

2018 ◽

Vol 8 (8) ◽

pp. 085206 ◽

Author(s):

Seung-Un Lee ◽

Jaewook Jeong

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Solution Processed ◽

Indium Gallium ◽

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Inert gas annealing effect in solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

Journal of the Korean Physical Society ◽

10.3938/jkps.71.209 ◽

2017 ◽

Vol 71 (4) ◽

pp. 209-214 ◽

Author(s):

Seungwoon Lee ◽

Jaewook Jeong

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Annealing Effect ◽

Inert Gas ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Solution Processed ◽

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Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing

Semiconductor Science and Technology ◽

10.1088/0268-1242/28/10/105002 ◽

2013 ◽

Vol 28 (10) ◽

pp. 105002 ◽

Author(s):

Haifeng Pu ◽

Qianfei Zhou ◽

Lan Yue ◽

Qun Zhang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Infrared Irradiation ◽

Zinc Oxide Thin Film ◽

Solution Processed ◽

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Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode

Journal of Sensor Science and Technology ◽

10.5369/jsst.2013.22.2.105 ◽

2013 ◽

Vol 22 (2) ◽

pp. 105-110 ◽

Author(s):

Young-Soo No ◽

Jeong-Do Yang ◽

Dong-Hee Park ◽

Tae-Whan Kim ◽

Ji-Won Choi ◽

...

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Multilayer Electrode ◽

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Effects of argon flow rate on electrical properties of amorphous indium gallium zinc oxide thin-film transistors

Thin Solid Films ◽

10.1016/j.tsf.2015.12.016 ◽

2016 ◽

Vol 605 ◽

pp. 129-135 ◽

Author(s):

A.K. Sahoo ◽

G.M. Wu

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Argon Flow Rate ◽

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