Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm
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2007 ◽
Vol 301-302
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pp. 751-754
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2013 ◽
Vol 378
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pp. 459-462
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2000 ◽
Vol 31
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pp. 1-7
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2003 ◽
Vol 0
(4)
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pp. 1193-1196
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