Normal-incidence voltage-tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots

AbstractMultiple layers of self assembled In0.3Ga0.7As quantum dots of different size were grown on GaAs (100) using molecular beam epitaxy. Fourier-transform infrared spectroscopy shows absorption in the long-wavelength infrared region (8–10 νm) under normal incidence. The absorbance peak shift with dot size was investigated and revealed non-monotonic behavior of intersubband transitions. The optical absorption coefficient was calculated to be in order of 3.8×103 cm-2.

Download Full-text

Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded in Modulation-Doped GaAs Quantum Wells

MRS Proceedings ◽

10.1557/proc-607-147 ◽

1999 ◽

Vol 607 ◽

Author(s):

Seung-Woong Lee ◽

Kazuhiko Hirakawa ◽

Yozo Shimada

Keyword(s):

Quantum Dots ◽

Quantum Wells ◽

High Mobility ◽

Normal Incidence ◽

Infrared Photodetector ◽

Inas Quantum Dots ◽

Operation Temperature ◽

Long Lifetime ◽

Quantum Dot Infrared Photodetector ◽

Self Assembled

AbstractWe have designed and fabricated a quantum dot infrared photodetector which utilizes lateral transport of photoexcited carriers in the modulation-doped A1GaAs/GaAs two-dimensional (2D) channels. A broad photocurrent signal has been observed in the photon energy range of 100–300 meV due to bound-to-continuum intersubband absorption of normal incidence radiation in the self-assembled InAs quantum dots. A peak responsivity was as high as 2.3 A/W. The high responsivity is realized mainly by a high mobility and a long lifetime of photoexcited carriers in the modulation-doped 2D channels. Furthermore, we found that this device has high operation temperature and very high photoconductive gain.

Download Full-text

Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm

Applied Physics Letters ◽

10.1063/1.4913443 ◽

2015 ◽

Vol 106 (8) ◽

pp. 082103 ◽

Cited By ~ 17

Author(s):

K. Shimomura ◽

I. Kamiya

Keyword(s):

Quantum Dots ◽

Strain Engineering ◽

Inas Quantum Dots ◽

Long Wavelength ◽

Wavelength Emission ◽

Self Assembled

Download Full-text

Self-Assembled InAs Quantum Dots on InP(001) for Long-Wavelength Laser Applications

ETRI Journal ◽

10.4218/etrij.04.0104.0028 ◽

2004 ◽

Vol 26 (5) ◽

pp. 475-480 ◽

Cited By ~ 13

Author(s):

Jin Soo Kim ◽

Jin Hong Lee ◽

Sung Ui Hong ◽

Ho-Sang Kwack ◽

Chul Wook Lee ◽

...

Keyword(s):

Quantum Dots ◽

Laser Applications ◽

Inas Quantum Dots ◽

Long Wavelength ◽

Self Assembled

Download Full-text

Quantum Dot Long-Wavelength Detectors

MRS Proceedings ◽

10.1557/proc-692-h3.2.1 ◽

2001 ◽

Vol 692 ◽

Author(s):

Pallab Bhattacharya ◽

Adrienne D. Stiff-Roberts ◽

Sanjay Krishna ◽

Steve Kennerly

Keyword(s):

Quantum Dots ◽

Quantum Dot ◽

Elevated Temperatures ◽

Infrared Imaging ◽

Normal Incidence ◽

Infrared Photodetectors ◽

Long Wavelength ◽

Quantum Dot Infrared Photodetectors ◽

Dark Currents ◽

Long Wavelength Infrared

AbstractLong-wavelength infrared detectors operating at elevated temperatures are critical for imaging applications. InAs/GaAs quantum dots are an important material for the design and fabrication of high-temperature infrared photodetectors. Quantum dot infrared photodetectors allow normal-incidence operation, in addition to low dark currents and multispectral response. The long intersubband relaxation time of electrons in quantum dots improves the responsivity of the detectors, contributing to better hightemperature performance. We have obtained extremely low dark currents (Idark = 1.7 pA, T = 100 K, Vbias = 0.1 V), high detectivities (D* = 2.9×108cmHz1/2/W, T = 100 K, Vbias = 0.2 V), and high operating temperatures (T = 150 K) for these quantum-dot detectors. These results, as well as infrared imaging with QDIPs, will be described and discussed.

Download Full-text