scholarly journals Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces

AIP Advances ◽  
2015 ◽  
Vol 5 (3) ◽  
pp. 037130 ◽  
Author(s):  
Basanta Roul ◽  
Shruti Mukundan ◽  
Greeshma Chandan ◽  
Lokesh Mohan ◽  
S. B. Krupanidhi
Keyword(s):  
Barrier Height ◽  
Electrical Transport ◽  
Gan Heterostructure

Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure

1998 ◽  
Vol 73 (26) ◽  
pp. 3917-3919 ◽  
Author(s):  
L. S. Yu ◽  
Q. J. Xing ◽  
D. Qiao ◽  
S. S. Lau ◽  
K. S. Boutros ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Internal Photoemission ◽  
Gan Heterostructure

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

2016 ◽  
Vol 858 ◽  
pp. 1170-1173 ◽  
Author(s):  
Giuseppe Greco ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Domenico Corso ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Transport Mechanism ◽  
Carrier Transport ◽  
Schottky Barrier Height ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Thermionic Field Emission ◽  
Current Voltage Characteristics ◽  
Gan Heterostructure

In this paper, the electrical properties of different metal/p-GaN contacts (Ti/Al, TiN/Ti/Al and Ni/Au) have been investigated to get a deeper understanding of the behavior of p-GaN/AlGaN/GaN heterostructures for normally-off HEMTs. In particular, the study of the temperature dependent current-voltage characteristics allowed to identify the dominant carrier transport mechanism at the metal/p-GaN interface (Thermionic Field Emission). From the fit of the experimental current-voltage data it was possible to determine the Schottky barrier height values for the three systems, 2.08 eV (Ti/Al), 1.57 eV (TiN/Ti/Al) and 1.89 eV (Ni/Au). Hence, choosing the highest barrier height contact (Ti/Al) as gate electrode on a p-GaN/AlGaN/GaN heterostructure, optimized based on simulations, allowed to obtain devices with a normally-off behavior and a positive Vth of +1.3 V.

Electrical transport modulation of VO2/Si(111) heterojunction by engineering interfacial barrier height

2021 ◽  
Vol 129 (24) ◽  
pp. 244502
Author(s):  
Basanta Roul ◽  
Deependra Kumar Singh ◽  
Rohit Pant ◽  
Arun Malla Chowdhury ◽  
K. K. Nanda ◽  
...  
Keyword(s):  
Barrier Height ◽  
Electrical Transport ◽  
Transport Modulation

Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

2011 ◽  
Vol 109 (4) ◽  
pp. 044502-044502-5 ◽  
Author(s):  
Basanta Roul ◽  
Mohana K. Rajpalke ◽  
Thirumaleshwara N. Bhat ◽  
Mahesh Kumar ◽  
Neeraj Sinha ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Schottky Diodes ◽  
Temperature Dependent ◽  
Transport Behavior ◽  
Gan Heterostructure
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