Surface donor states-dependent bare surface barrier height and 2DEG density of AlGaN/GaN heterostructure exerted uniaxial stress

2018 ◽  
Vol 5 (2) ◽  
pp. 025903 ◽  
Author(s):  
Ashu Wang ◽  
Lingyan Zeng ◽  
Wen Wang
Keyword(s):  
Barrier Height ◽  
Uniaxial Stress ◽  
Surface Barrier ◽  
2Deg Density ◽  
Donor States ◽  
Gan Heterostructure ◽  
Surface Donor ◽  
Bare Surface

Impact of Gate Metal on Surface States Distribution and Effective Surface Barrier Height in AlGaN/GaN Heterostructures

2013 ◽  
Vol 1538 ◽  
pp. 335-340 ◽  
Author(s):  
Nitin Goyal ◽  
Tor A. Fjeldly
Keyword(s):  
Barrier Height ◽  
Surface States ◽  
Surface Barrier ◽  
Metal Gate ◽  
Effective Surface ◽  
Barrier Layers ◽  
Donor Density ◽  
Model Predictions ◽  
Surface Donor ◽  
Bare Surface

ABSTRACTA physics based model is presented to describe the surface donor density distribution for metal/AlGaN/GaN structures. This model partly relies on experimental observations to describe the reduction that takes place in surface donor density when the metal gate is deposited. This new model is based on our previous work on the bare surface barrier height for both unrelaxed and partially relaxed barrier layers. The model predictions are consistent with reported experimental data.

Analytical modeling of bare surface barrier height and charge density in AlGaN/GaN heterostructures

2012 ◽  
Vol 101 (10) ◽  
pp. 103505 ◽  
Author(s):  
Nitin Goyal ◽  
Benjamin Iñiguez ◽  
Tor A. Fjeldly
Keyword(s):  
Charge Density ◽  
Barrier Height ◽  
Analytical Modeling ◽  
Surface Barrier ◽  
Bare Surface

scholarly journals Влияние одноосной деформации в направлении [110] на релаксацию состояний мелких доноров мышьяка в германии

2020 ◽  
Vol 54 (9) ◽  
pp. 918
Author(s):  
В.В. Цыпленков ◽  
В.Н. Шастин
Keyword(s):  
Energy Levels ◽  
Optical Excitation ◽  
Uniaxial Stress ◽  
Shallow Donor ◽  
Stimulated Emission ◽  
Relaxation Rates ◽  
Emission Frequency ◽  
Donor States ◽  
Uniaxial Compressive Stress ◽  
Intracenter Transitions

Analysis of acoustical phonon assisted relaxation rates of arsenic donor states has been carried out in depends on uniaxial compressive stress of crystal along [110] direction under low temperature (< 10 K). As shown, under optical excitation the inversion population of donor energy levels is formed that depends on deformation of crystal. This give grounds to suppose that stimulated emission on arsenic shallow donor intracenter transitions in THz range is possible under optical excitation. As shown, uniaxial stress along [110] direction can result to switch laser transition and stimulated emission frequency

scholarly journals Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces

AIP Advances ◽  
2015 ◽  
Vol 5 (3) ◽  
pp. 037130 ◽  
Author(s):  
Basanta Roul ◽  
Shruti Mukundan ◽  
Greeshma Chandan ◽  
Lokesh Mohan ◽  
S. B. Krupanidhi
Keyword(s):  
Barrier Height ◽  
Electrical Transport ◽  
Gan Heterostructure

STM studies of Fermi-level pinning on the GaAs(001) surface

1993 ◽  
Vol 344 (1673) ◽  
pp. 533-543 ◽  
Keyword(s):  
Fermi Level ◽  
Valence Band ◽  
Surface Defects ◽  
Defect Density ◽  
Valence Band Maximum ◽  
Intrinsic Defect ◽  
Fermi Level Pinning ◽  
Donor States ◽  
P Type ◽  
Surface Donor

This paper reviews recent scanning tunnelling microsopy (STM) studies of Fermi-level pinning on the surface of both n- and p-type GaAs(001). The samples are all grown by molecular beam epitaxy and have a (2 x 4)/c(2 x 8) surface reconstruction. The STM has shown that on the surface of highly doped n-type GaAs(001) there is a high density of kinks in the dimer-vacancy rows of the (2 x 4) reconstruction. These kinks are found to be surface acceptors with approximately one electron per kink. The kinks form in exactly the required number to pin the Fermi-level of n-type GaAs(001) at an acceptor level close to mid gap, irrespective of doping level. The Fermi-level position is confirmed with tunnelling spectroscopy. No similar surface donor states are found on p-type GaAs(001). In this case Fermi-level pinning results from ‘intrinsic’ surface defects such as step edges. Since this intrinsic defect density is independent of doping, at high doping levels the Fermi-level on p-type GaAs(001) moves down in the band gap towards the valence band. Tunnelling spectroscopy on p-type GaAs(001) doped 10 19 cm -3 with Be shows the Fermi-level to be 150 mV above the valence band maximum

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