Metamorphic InAs1-xBix/In0.83Al0.17As quantum well structures on InP for mid-infrared emission

2016 ◽  
Vol 109 (12) ◽  
pp. 122102 ◽  
Author(s):  
Y. Gu ◽  
Y. G. Zhang ◽  
X. Y. Chen ◽  
Y. J. Ma ◽  
S. P. Xi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Emission ◽  
Mid Infrared ◽  
Quantum Well Structures

Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity

2011 ◽  
Vol 19 (2) ◽  
Author(s):  
M. Motyka ◽  
F. Janiak ◽  
K. Ryczko ◽  
G. Sęk ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Gas Sensing ◽  
Infrared Emission ◽  
Infrared Range ◽  
Type Ii ◽  
Mid Infrared ◽  
Quantum Well Structures ◽  
Gasb Layer ◽  
Resonant States

AbstractModulation spectroscopy in its Fourier-transformed mode has been employed to investigate the optical properties of broken gap ‘W’-shaped GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb quantum well structures designed to emit in the mid infrared range of 3–4 μm for applications in laser-based gas sensing. Besides the optical transitions originating from the confined states in the type II quantum wells, a number of spectral features at the energy above the GaSb band gap have been detected. They have been analyzed in a function of InAs and GaSb layer widths and ultimately connected with resonant states in the range of AlSb tunneling barriers.

Strain-balanced InAsP∕InP∕InGaAs multiple quantum well structures for mid-infrared photodetectors

2002 ◽  
Vol 38 (25) ◽  
pp. 1744
Author(s):  
M. Wada ◽  
S. Araki ◽  
T. Kudou ◽  
T. Umezawa ◽  
S. Nakajima ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Infrared Photodetectors ◽  
Multiple Quantum ◽  
Mid Infrared ◽  
Quantum Well Structures

GaAs/AlGaAs Intersubband MID-Infrared Emitter

1997 ◽  
Vol 484 ◽  
Author(s):  
G. Strasser ◽  
S. Gianordoli ◽  
L. Hvozdara ◽  
H. Bichl ◽  
K. Unterrainer ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Quantum Well ◽  
Material System ◽  
Mid Infrared ◽  
Quantum Well Structures ◽  
Emit Radiation ◽  
Infrared Emitter ◽  
Cladding Layers ◽  
Photocurrent Spectra

AbstractWe report here the growth and characterization of intersubband quantum well structures based on the GaAs/AlGaAs material system, designed to emit radiation at approximately 7 micrometers. We present transport behavior, infrared photocurrent spectra, and electroluminescence data. First attempts to fabricate a laser structure from this devices encountered difficulties with the electrical properties of the AIGaAs waveguide cladding layers. Thus, we present measurements with different waveguide concepts as doped AlAs cladding layers and doped superlattice cladding structures.

Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field

2017 ◽  
Vol 51 (3) ◽  
pp. 363-366 ◽  
Author(s):  
R. M. Balagula ◽  
M. Ya. Vinnichenko ◽  
I. S. Makhov ◽  
A. N. Sofronov ◽  
D. A. Firsov ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Infrared Radiation ◽  
Phase Modulation ◽  
Double Quantum ◽  
Mid Infrared ◽  
Quantum Well Structures ◽  
Lateral Electric Field ◽  
Double Quantum Well

INTERSUBBAND SPECTROSCOPY IN QUANTUM WELL STRUCTURES AT HIGH NONEQUILIBRIUM CARRIER DENSITIES

2003 ◽  
Vol 02 (06) ◽  
pp. 445-451 ◽  
Author(s):  
A. SEILMEIER ◽  
S. HANNA ◽  
V. A. SHALYGIN ◽  
D. A. FIRSOV ◽  
L. E. VOROBJEV ◽  
...  
Keyword(s):  
Quantum Well ◽  
Visible Spectral Range ◽  
Nonequilibrium Carrier ◽  
Free Carrier Absorption ◽  
Time Behavior ◽  
Mid Infrared ◽  
Quantum Well Structures ◽  
Picosecond Pulses ◽  
Semiconductor Quantum Well ◽  
Carrier Absorption

In the present paper, the electronic intersubband transitions in semiconductor quantum well structures are investigated using transient mid infrared absorption spectroscopy after interband photoexcitation with intense picosecond pulses in the visible spectral range. The focus of our investigations is on the e2–e3 intersubband transition in an asymmetric undoped GaAs / AlGaAs quantum well (QW) structure at room temperature. At injected nonequilibrium carrier densities of 1×1013 cm -2 per QW, an e2–e3 absorption band at 99 meV is found which is blue-shifted with increasing carrier density. Intersubband absorption signals are distinguished from free-carrier absorption signals in the mid infrared (MIR) by their characteristic time behavior.

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