Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation

2016 ◽  
Vol 109 (19) ◽  
pp. 193504 ◽  
Author(s):  
Yong Huang ◽  
Jing-Ping Xu ◽  
Lu Liu ◽  
Pui-To Lai ◽  
Wing-Man Tang
Keyword(s):  
Electrical Properties ◽  
Gate Dielectric ◽  
Passivation Layer ◽  
Mos Capacitor

Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation

2017 ◽  
Vol 64 (9) ◽  
pp. 3528-3533 ◽  
Author(s):  
Yong Huang ◽  
Jing-Ping Xu ◽  
Lu Liu ◽  
Zhi-Xiang Cheng ◽  
Pui-To Lai ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Passivation Layer ◽  
Mos Capacitor

N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric

2016 ◽  
Vol 63 (7) ◽  
pp. 2838-2843 ◽  
Author(s):  
Yong Huang ◽  
Jing-Ping Xu ◽  
Lu Liu ◽  
Pui-To Lai ◽  
Wing-Man Tang
Keyword(s):  
Gate Dielectric ◽  
Passivation Layer ◽  
Mos Capacitor ◽  
Interface Passivation ◽  
N2 Plasma
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