Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor with LaTaON Gate Dielectric by Optimizing Ta Content

Chinese Physics Letters ◽

10.1088/0256-307x/35/7/077302 ◽

2018 ◽

Vol 35 (7) ◽

pp. 077302 ◽

Author(s):

Xu Bin ◽

Jing-Ping Xu ◽

Lu Liu ◽

Yong Su

Keyword(s):

Electrical Properties ◽

Gate Dielectric ◽

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Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation

Applied Physics Letters ◽

10.1063/1.4967186 ◽

2016 ◽

Vol 109 (19) ◽

pp. 193504 ◽

Author(s):

Yong Huang ◽

Jing-Ping Xu ◽

Lu Liu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Gate Dielectric ◽

Passivation Layer ◽

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Effects of fluorine incorporation on the electrical properties of silicon MOS capacitor with La2O3 gate dielectric

2011 IEEE International Conference of Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2011.6117657 ◽

2011 ◽

Author(s):

L. X. Qian ◽

X. D. Huang ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Gate Dielectric ◽

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Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer

Applied Physics Letters ◽

10.1063/1.4996722 ◽

2017 ◽

Vol 111 (5) ◽

pp. 053501 ◽

Author(s):

Yong Huang ◽

Jing-Ping Xu ◽

Lu Liu ◽

Zhi-Xiang Cheng ◽

Pui-To Lai ◽

...

Keyword(s):

Electrical Properties ◽

Gate Dielectric ◽

Passivation Layer ◽

Multilayer Composite ◽

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Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2667041 ◽

2017 ◽

Vol 64 (4) ◽

pp. 1535-1540 ◽

Author(s):

Han-Han Lu ◽

Lu Liu ◽

Jing-Ping Xu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Gate Dielectric ◽

Passivation Layer ◽

Multilayer Composite ◽

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Varying sputtering ambient and annealing gas to optimize the electrical properties of MOS capacitor with HfLaO gate dielectric

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) ◽

10.1109/edssc.2010.5713772 ◽

2010 ◽

Author(s):

Q B Tao ◽

P T Lai

Keyword(s):

Electrical Properties ◽

Gate Dielectric ◽

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Temperature dependence of electrical properties for MOS capacitor with HfO2/SiO2 gate dielectric stack

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2012.09.013 ◽

2013 ◽

Vol 16 (5) ◽

pp. 1321-1327 ◽

Author(s):

T. Yu ◽

C.G. Jin ◽

Y.J. Dong ◽

D. Cao ◽

L.J. Zhuge ◽

...

Keyword(s):

Electrical Properties ◽

Temperature Dependence ◽

Gate Dielectric ◽

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Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment

Applied Surface Science ◽

10.1016/j.apsusc.2019.07.055 ◽

2019 ◽

Vol 493 ◽

pp. 628-633

Author(s):

Yong Huang ◽

Jing-Ping Xu ◽

Lu Liu ◽

Zhi-Xiang Cheng ◽

Pui-To Lai ◽

...

Keyword(s):

Electrical Properties ◽

Plasma Treatment ◽

Gate Dielectric ◽

Passivation Layer ◽

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Electrical properties of LaTiO high-k gate dielectric Ge MOS Capacitor and Ti content optimization

Acta Physica Sinica ◽

10.7498/aps.65.037301 ◽

2016 ◽

Vol 65 (3) ◽

pp. 037301

Author(s):

Xu Huo-Xi ◽

Xu Jing-Ping

Keyword(s):

Electrical Properties ◽

Gate Dielectric ◽

Mos Capacitor ◽

High K ◽

Content Optimization ◽

High K Gate Dielectric

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Thermal stability and electrical properties of Zr silicate films for high-k gate-dielectric applications, as prepared by pulsed laser deposition

Applied Physics A ◽

10.1007/s00339-003-2187-4 ◽

2005 ◽

Vol 80 (2) ◽

pp. 321-324 ◽

Author(s):

J. Zhu ◽

Z.G. Liu ◽

M. Zhu ◽

G.L. Yuan ◽

J.M. Liu

Keyword(s):

Thermal Stability ◽

Electrical Properties ◽

Pulsed Laser Deposition ◽

Gate Dielectric ◽

Pulsed Laser ◽

Laser Deposition ◽

High K ◽

High K Gate Dielectric

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Electrical properties of 1.5-nm SiON gate-dielectric using radical oxygen and radical nitrogen

IEEE Transactions on Electron Devices ◽

10.1109/ted.2002.804695 ◽

2002 ◽

Vol 49 (11) ◽

pp. 1903-1909 ◽

Author(s):

M. Togo ◽

K. Watanabe ◽

T. Yamamoto ◽

N. Ikarashi ◽

T. Tatsumi ◽

...

Keyword(s):

Electrical Properties ◽

Gate Dielectric

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