Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

2017 ◽  
Vol 121 (8) ◽  
pp. 085306 ◽  
Author(s):  
Dimitrios Deligiannis ◽  
Jeroen van Vliet ◽  
Ravi Vasudevan ◽  
René A. C. M. M. van Swaaij ◽  
Miro Zeman
2018 ◽  
Vol 662 ◽  
pp. 97-102 ◽  
Author(s):  
Johwa Yang ◽  
Hyunjin Jo ◽  
Soo-Won Choi ◽  
Dong-Won Kang ◽  
Jung-Dae Kwon

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. R. Middya ◽  
Eric A. Schiff

ABSTRACTIn this work, we report on investigation of p-type semiconducting polymer, {poly(3,4 polyethylenedioxythiophene)-poly(styrenesulfonate)} (PEDOT:PSS) as the p-layer in NIP and PIN hydrogenated amorphous silicon (a-Si:H) solar cells. The rectification ratio of solution-casted diode is ∼ 10, it increases to 3×104 when PEDOT:PSS is deposited by Spin Coating technique. We observed additional photovoltaic effect when light is illuminated through polymer side. So far, best solar cells characteristics observed for PEDOT:PSS/a-Si:H hybrid solar cells are Voc ≈ 720 mV and Jsc ≈ 1 - 2 mA/cm2.


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