Effect of high energy electron irradiation on low frequency noise in 4H-SiC Schottky diodes

2017 ◽  
Vol 110 (13) ◽  
pp. 133501 ◽  
Author(s):  
V. V. Kozlovski ◽  
A. A. Lebedev ◽  
M. E. Levinshtein ◽  
S. L. Rumyantsev ◽  
J. W. Palmour
Keyword(s):  
Electron Irradiation ◽  
Schottky Diodes ◽  
Low Frequency ◽  
High Energy ◽  
Energy Electron ◽  
Frequency Noise ◽  
High Energy Electron ◽  
Low Frequency Noise

Low-frequency noise behaviour of high-energy electron irradiated Si n+p junction diodes

1995 ◽  
Vol 31 (12) ◽  
pp. 1016-1018 ◽  
Author(s):  
J.P. Dubuc ◽  
E. Simoen ◽  
P. Vasina ◽  
C. Claeys
Keyword(s):  
Low Frequency ◽  
High Energy ◽  
Energy Electron ◽  
Frequency Noise ◽  
High Energy Electron ◽  
Low Frequency Noise

Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes

2018 ◽  
Vol 924 ◽  
pp. 605-608
Author(s):  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski ◽  
Michael E. Levinshtein ◽  
S.L. Rumyantsev ◽  
John W. Palmour
Keyword(s):  
Electron Irradiation ◽  
Schottky Diodes ◽  
Linear Part ◽  
Low Frequency ◽  
High Energy ◽  
Frequency Noise ◽  
Relaxation Processes ◽  
Low Frequency Noise ◽  
Current Voltage ◽  
Current Voltage Characteristics

Electron irradiation of high voltage Ni/4H-SiC Schottky diodes with the dose Φ=(0.2-7)×1016cm-2 led to increase in the base resistance, appearance of slow relaxation processes at extremely small currents, and increase of the low frequency noise. On exponential part of the current-voltage characteristics and on linear part of current-voltage characteristics in non-irradiated samples, low frequency noise always has the form of the 1/f noise. On linear part of the current-voltage characteristics in irradiated diodes the generation recombination (GR) noise predominates. Temperature dependences of the base resistivity and character of GR noise indicate that mainly Z1/2 center contributes to the change in the parameters of irradiated samples. Capture cross section of this level, obtained from noise measurements, is within the range (8×10-16-2×10-15) cm2 and only weakly depends on temperature.

Impact of high energy electron irradiation on high voltage Ni/4H-SiC Schottky diodes

2017 ◽  
Vol 110 (8) ◽  
pp. 083503 ◽  
Author(s):  
V. V. Kozlovski ◽  
A. A. Lebedev ◽  
M. E. Levinshtein ◽  
S. L. Rumyantsev ◽  
J. W. Palmour
Keyword(s):  
High Voltage ◽  
Electron Irradiation ◽  
Schottky Diodes ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron

Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes

2019 ◽  
Vol 53 (10) ◽  
pp. 1409-1413
Author(s):  
A. A. Lebedev ◽  
V. V. Kozlovski ◽  
P. A. Ivanov ◽  
M. E. Levinshtein ◽  
A. V. Zubov
Keyword(s):  
Electron Irradiation ◽  
Schottky Diodes ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron

Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes

2021 ◽  
Vol 42 (3) ◽  
pp. 442-445
Author(s):  
Dongseok Kwon ◽  
Wonjun Shin ◽  
Jong-Ho Bae ◽  
Suhwan Lim ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics

scholarly journals Influence of high-energy electron irradiation on the transport properties of La Ca MnO films ( )

2000 ◽  
Vol 15 (3) ◽  
pp. 461-468
Author(s):  
B.I. Belevtsev ◽  
V.B. Krasovitsky ◽  
V.V. Bobkov ◽  
D.G. Naugle ◽  
K.D.D. Rathnayaka ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electron Irradiation ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron
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