We fabricated 25 Au/[Formula: see text]-GaP/Al Schottky devices and investigated the influence of high electron irradiation, which has 12[Formula: see text]MeV on the devices, at room temperature. The X-ray diffraction patterns, scanning electron microscopic images and Raman spectra of a gallium phosphide (GaP) semiconductor before and after electron irradiation have been analyzed. Furthermore, some electrical measurements of the devices were carried out through the current–voltage ([Formula: see text]–[Formula: see text]) and capacitance–voltage ([Formula: see text]–[Formula: see text]) measurements. From the [Formula: see text]–[Formula: see text] characteristics, experimental ideality factor [Formula: see text] and barrier height [Formula: see text] values of these Schottky diodes have been determined before and after irradiation, respectively. The results have also been analyzed statically, and a gauss distribution has been obtained. The built-in potential [Formula: see text], barrier height [Formula: see text], Fermi level [Formula: see text] and donor concentration [Formula: see text] values have been determined from the reverse bias [Formula: see text]–[Formula: see text] and [Formula: see text] curves of Au/[Formula: see text]-GaP/Al Schottky barrier diodes at 100[Formula: see text]kHz before and after 12[Formula: see text]MeV electron irradiation. Furthermore, we obtained the series resistance values of Au/[Formula: see text]-GaP/Al Schottky barrier diodes with the help of different methods. Experimental results confirmed that the electrical characterization of the device changed with the electron irradiation.
The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes
