Integrated Monolithic Inverter Using Gate-Recessed GaN-Based Enhancement-Mode and Depletion-Mode Metal-Oxide-Semiconductor High-Electron Mobility Transistors
2017 ◽
Vol 6
(10)
◽
pp. Q123-Q126
◽
2015 ◽
Vol 62
(8)
◽
pp. 2481-2487
◽
2019 ◽
pp. 391-402
◽
2020 ◽
Vol 67
(5)
◽
pp. 1939-1945
◽
2013 ◽
Vol 52
(8S)
◽
pp. 08JN08
◽
2019 ◽
Vol 58
(SC)
◽
pp. SCCD21
◽