Significance of the gate voltage-dependent mobility in the electrical characterization of organic field effect transistors

2018 ◽  
Vol 112 (17) ◽  
pp. 173301 ◽  
Author(s):  
Jong Beom Kim ◽  
Dong Ryeol Lee
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Organic Field Effect Transistors ◽  
Voltage Dependent

scholarly journals Inexpensive Measuring System for the Characterization of Organic Transistors

2018 ◽  
Vol 2018 ◽  
pp. 1-9
Author(s):  
Clara Pérez-Fuster ◽  
José Vicente Lidón-Roger ◽  
Laura Contat-Rodrigo ◽  
Eduardo García-Breijo
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Measuring System ◽  
Organic Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Semiconductor Devices ◽  
Measuring Module ◽  
Four Quadrant

A measuring module has been specifically designed for the electrical characterization of organic semiconductor devices such as organic field effect transistors (OFETs) and organic electrochemical transistors (OECTs) according to the IEEE 1620-2008 standard. This device has been tested with OFETs based on 6,13-bis(triisopropylsilylethinyl)pentacene (TIPS-pentacene). The measuring system has been constructed using a NI-PXIe-1073 chassis with integrated controller and two NI-PXI-4132 programmable high-precision source measure units (SMUs) that offer a four-quadrant ± 100 V output, with resolution down to 10 pA. LabVIEW™ has been used to develop the appropriate program. Most of the main OFET parameters included in the IEEE 1620 standard can be measured by means of this device. Although nowadays expensive devices for the characterization of Si-based transistors are available, devices for the characterization of organic transistors are not yet widespread in the market. Fabrication of a specific and flexible module that can be used to characterize this type of transistors would provide a powerful tool to researchers.

scholarly journals Memory effects in black phosphorus field effect transistors

2D Materials ◽  
2021 ◽  
Author(s):  
Alessandro Grillo ◽  
Aniello Pelella ◽  
Enver Faella ◽  
Filippo Giubileo ◽  
Stephan Sleziona ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Methyl Methacrylate ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Transfer Characteristic ◽  
Black Phosphorus ◽  
Defect States

Abstract We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer characteristic, due to intrinsic defects, can be exploited to realize non-volatile memories. We demonstrate that gate voltage pulses allow to trap and store charge inside the defect states, which enable memory devices with endurance over 200 cycles and retention longer than 30 minutes. We show that the use of a protective poly (methyl methacrylate) layer, positioned on top of the black phosphorus channel, does not affect the electrical properties of the device but avoids the degradation caused by the exposure to air.

Static model for organic field-effect transistors including both gate-voltage-dependent mobility and depletion effect

2006 ◽  
Vol 88 (23) ◽  
pp. 233514 ◽  
Author(s):  
R. R. Schliewe ◽  
F. A. Yildirim ◽  
W. von Emden ◽  
R. Witte ◽  
W. Bauhofer ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Static Model ◽  
Organic Field Effect Transistors ◽  
Depletion Effect ◽  
Voltage Dependent
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