Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Author(s):

T. Partida-Manzanera ◽

Z. H. Zaidi ◽

J. W. Roberts ◽

S. B. Dolmanan ◽

K. B. Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectrics ◽

Atomic Layer ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) ◽

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with TiO2 gate dielectrics

10.1109/iciprm.2016.7528615 ◽

2016 ◽

Author(s):

Yu-Shyan Lin ◽

Chi-Che Lu

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectrics ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Semiconductor Science and Technology ◽

10.1088/1361-6641/aa9b58 ◽

2017 ◽

Vol 33 (1) ◽

pp. 015007 ◽

Author(s):

Seonno Yoon ◽

Seungmin Lee ◽

Hyun-Seop Kim ◽

Ho-Young Cha ◽

Hi-Deok Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectrics ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.5044590 ◽

2018 ◽

Vol 124 (16) ◽

pp. 165704 ◽

Author(s):

Jaya Jha ◽

Bhanu B. Upadhyay ◽

Kuldeep Takhar ◽

Navneet Bhardwaj ◽

Swaroop Ganguly ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Carrier Trapping ◽

Electron Mobility Transistors ◽

Field Dependent

Metal Oxide Semiconductor High Electron Mobility Transistors

Handbook for III-V High Electron Mobility Transistor Technologies ◽

10.1201/9780429460043-15 ◽

2019 ◽

pp. 391-402 ◽

Cited By ~ 1

Author(s):

D. K. Panda ◽

G. Amarnath ◽

T. R. Lenka

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Surface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors

Nano-Semiconductors ◽

10.1201/9781315217468-22 ◽

2018 ◽

pp. 429-474

Keyword(s):

Metal Oxide ◽

Surface Treatment ◽

Electron Mobility ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Fin-Gated Nanochannel Array Gate-Recessed AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.2981138 ◽

2020 ◽

Vol 67 (5) ◽

pp. 1939-1945 ◽

Cited By ~ 1

Author(s):

Ching-Ting Lee ◽

Jia-Chen Guo

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Nanochannel Array

Control of Threshold Voltage in GaN Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors towards the Normally-Off Operation

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.08jn08 ◽

2013 ◽

Vol 52 (8S) ◽

pp. 08JN08 ◽

Cited By ~ 20

Author(s):

Milan Ťapajna ◽

Ján Kuzmík

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Electron Mobility ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab06b8 ◽

2019 ◽

Vol 58 (SC) ◽

pp. SCCD21 ◽

Cited By ~ 1

Author(s):

Dagmar Gregušová ◽

Lajos Tóth ◽

Ondrej Pohorelec ◽

Stanislav Hasenöhrl ◽

Štefan Haščík ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement mode GaN-based multiple-submicron channel array gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors

AIP Advances ◽

10.1063/1.5022029 ◽

2018 ◽

Vol 8 (4) ◽

pp. 045014 ◽

Author(s):

Ching-Ting Lee ◽

Chun-Chi Wang

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Investigation of AlGaN/GaN/AlGaN metal -oxide-semiconductor high electron mobility transistors

TENCON 2007 - 2007 IEEE Region 10 Conference ◽

10.1109/tencon.2007.4429135 ◽

2007 ◽

Author(s):

Li-Hsien Huang ◽

Chien-liang Lu ◽

Ching-Ting Lee

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽