scholarly journals Generalized Einstein relation for nonparabolic multiple energy-band degenerate semiconductors

AIP Advances ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 105122
Author(s):  
Jang Jyegal
Keyword(s):  
Energy Band ◽  
Einstein Relation ◽  
Degenerate Semiconductors ◽  
Generalized Einstein Relation

Einstein Rzlation in Quantum Wires of Tetragonal Sediconduc Tors

1990 ◽  
Vol 198 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
B. De ◽  
M. Mondal ◽  
S. N. Biswas
Keyword(s):  
Energy Spectrum ◽  
Film Thickness ◽  
Electron Concentration ◽  
Energy Band ◽  
Quantum Wires ◽  
Electron Energy Spectrum ◽  
Einstein Relation ◽  
Degenerate Semiconductors ◽  
Dispersion Law ◽  
Theoretical Results

ABSTRACTWe have studied the Einstein relation for the diffusivity. mobility ratio (7PT) on the basis of a newly derived electron energy spectrum in QW f tetragonal semiconductors, within the framework of K. P method by considering all types of anisotropies of the energy band parameters. It is found, taking n-Cd3 As2 as an example that the DUTZ increases with electron concentration and decreases with film thickness in an oscillatory manner respectively. The theoretical results are in good aoreement with the suggested experimental method of determining the DMR in degenerate semiconductors having arbitrary dispersion law.

Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures

1994 ◽  
Vol 33 (Part 1, No. 5A) ◽  
pp. 2619-2625 ◽  
Author(s):  
Yih-Feng Chyan ◽  
Simon Ming Sze ◽  
Chun-Yen Chang ◽  
Kenneth Liao ◽  
Rafael Reif
Keyword(s):  
Einstein Relation ◽  
Temperature Influence ◽  
Band Structures ◽  
Degenerate Semiconductors ◽  
Generalized Einstein Relation
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