Исследование плазмонного резонанса в Bi-=SUB=-2-=/SUB=-Se-=SUB=-3-=/SUB=- и Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=- методом инфракрасной спектральной эллипсометрии

In the infrared region of the spectrum (IR), the optical properties of single-crystal samples of narrow-gap degenerate semiconductors Bi2Se3 and Sb2Te3 are investigated by infrared spectral ellipsometry (SE). The transport properties of the Drude fitting of dielectric functions obtained by spectroscopic ellipsometry are studied. The behavior of the bulk and surface plasmon polaritons is investigated in detail. The dispersion and mean free path of the plasmon, the depth of the skin layer for the conducting and dielectric surfaces are calculated. The contribution of the plasmon to the optical properties is estimated from the spectral density for the Bi2Se3 and Sb2Te3 samples.

Localization by an external magnetic field of electrons on the ions of hydrogen-like donors in non-degenerate semiconductors

In the quasi-classical approximation of quantum mechanics a model for the localization of conduction electrons on the ions of hydrogen-like donors in an external magnetic field was developed. The thermal ionization energy of donors in lightly doped and moderately compensated crystals of gallium arsenide and indium antimonide of n-type was calculated depending on the induction of the external magnetic field. In contrast to the known theoretical works (which use variational methods for solving the Schrödinger equation), a simple analytical expression is proposed for the ionization energy of the donor in the magnetic field, which quantitatively agrees with the known experimental data. It is shown that the magnitude of the magnetic field induced by the orbital motion of the electron around the ion core of the donor is negligible compared to the external field and does not contribute to the ionization energy of donors.

Gapped metals as thermoelectric materials revealed by high-throughput screening

Gapped metals present in their band structure a gap near the Fermi level. This key feature makes these metals comparable to degenerate semiconductors and thus suitable as thermoelectrics. The present screening searches them systematically.

Thermoelectric Properties of Cu2SnSe3-SnS Composite

Heavily doped degenerate semiconductors such as Cu2SnSe3 (CTSe) attracted attention in thermoelectric (TE) and optoelectronic fields, due to their high electrical conductivity and small band gap. The small Seebeck coefficient of undoped CTSe, however, is the major issue in achieving high TE performance (figure of merit, ZT). Here, we report that the Seebeck coefficient of CTSe can be controlled by adding SnS within a CTSe matrix. CTSe-SnS composite has not only high Seebeck coefficient in the range of 300–500 µVolt/K but thermal conductivity which is lower than that of pristine CTSe due to the scattering at the interface between the matrix and the SnS particles. A reasonable ZT of 0.18 is achieved at 570 K by adding a small amount (3 wt.%) of SnS to the CTSe matrix.