Two‐dimensional electron gas at a molecular beam epitaxial‐grown, selectively doped, In0.53Ga0.47As‐In0.48Al0.52As interface
1992 ◽
Vol 31
(Part 1, No. 7)
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pp. 2075-2078
1985 ◽
Vol 24
(Part 1, No. 6)
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pp. 779-780
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1989 ◽
Vol 4
(9)
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pp. 819-823
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1991 ◽
Vol 9
(5)
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pp. 2675
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1996 ◽
Vol 40
(1-8)
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pp. 399-403
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2001 ◽
Vol 90
(10)
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pp. 5196-5201
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