Molecular‐beam‐epitaxial growth ofn‐AlGaAs on clean Cl2‐gas etched GaAs surfaces and the formation of high mobility two‐dimensional electron gas at the etch‐regrown interfaces
2007 ◽
Vol 304
(2)
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pp. 342-345
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2010 ◽
Vol 49
(6)
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pp. 061001
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