Molecular‐beam‐epitaxial growth ofn‐AlGaAs on clean Cl2‐gas etched GaAs surfaces and the formation of high mobility two‐dimensional electron gas at the etch‐regrown interfaces

1992 ◽  
Vol 61 (14) ◽  
pp. 1658-1660 ◽  
Author(s):  
Y. Kadoya ◽  
H. Noge ◽  
H. Kano ◽  
H. Sakaki ◽  
N. Ikoma ◽  
...  
2018 ◽  
Vol 5 (9) ◽  
pp. 1800844 ◽  
Author(s):  
Tao Wang ◽  
Xinqiang Wang ◽  
Zhaoying Chen ◽  
Xiaoxiao Sun ◽  
Ping Wang ◽  
...  

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