Solid phase epitaxial regrowth of amorphous silicon on molecular beam epitaxial silicon/Si layers

1983 ◽  
Vol 42 (12) ◽  
pp. 1021-1023 ◽  
Author(s):  
A. Christou ◽  
B. R. Wilkins ◽  
J. E. Davey
Keyword(s):  
Amorphous Silicon ◽  
Molecular Beam ◽  
Solid Phase ◽  
Epitaxial Silicon ◽  
Molecular Beam Epitaxial ◽  
Epitaxial Regrowth

Molecular-beam epitaxial regrowth on oxygen-implanted GaAs substrates for device integration

1999 ◽  
Vol 74 (26) ◽  
pp. 4058-4060 ◽  
Author(s):  
C. L. Chen ◽  
L. J. Mahoney ◽  
S. D. Calawa ◽  
K. M. Molvar ◽  
P. A. Maki ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Epitaxial Regrowth ◽  
Device Integration

Electronic properties of a one‐dimensional channel field effect transistor formed by molecular beam epitaxial regrowth on patterned GaAs

1993 ◽  
Vol 63 (16) ◽  
pp. 2219-2221 ◽  
Author(s):  
J. H. Burroughes ◽  
M. L. Leadbeater ◽  
M. P. Grimshaw ◽  
R. J. Evans ◽  
D. A. Ritchie ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
One Dimensional ◽  
Molecular Beam Epitaxial ◽  
Epitaxial Regrowth ◽  
Effect Transistor

Photoluminescence characterization of molecular beam epitaxial silicon

1989 ◽  
Vol 183 (1-2) ◽  
pp. 235-254 ◽  
Author(s):  
E.C. Lightowlers ◽  
V. Higgs ◽  
M.J. Gregson ◽  
G. Davies ◽  
S.T. Davey ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Epitaxial Silicon ◽  
Molecular Beam Epitaxial

Molecular beam epitaxial regrowth oninsituplasma‐etched AlAs/AlGaAs heterostructures

1992 ◽  
Vol 60 (14) ◽  
pp. 1738-1740 ◽  
Author(s):  
Kent D. Choquette ◽  
M. Hong ◽  
R. S. Freund ◽  
S. N. G. Chu ◽  
J. P. Mannaerts ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Epitaxial Regrowth

Epitaxial Crystallisation of Doped Amorphous Silicon

1983 ◽  
Vol 27 ◽  
Author(s):  
R.G. Elliman ◽  
S.T. Johnson ◽  
K.T. Short ◽  
J.S. Williams
Keyword(s):  
Energy Loss ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Irradiation ◽  
Electronic Energy ◽  
Epitaxial Regrowth ◽  
Ion Implanted

ABSTRACTThis paper outlines a model to account for the influence of doping and electronic processes on the solid phase epitaxial regrowth rate of ion implanted (100) silicon. In addition we present data which illustrates good quality epitaxial crystallisation of silicon at 400°C induced by He+ ion irradiation. We tentatively suggest that electronic energy-loss processes may be responsible for this behaviour.

Solid phase epitaxial regrowth of buried amorphous silicon layers obtained by ion irradiation

1994 ◽  
Vol 88 (3) ◽  
pp. 255-260 ◽  
Author(s):  
A.V. Buravlyov ◽  
L.Y. Krasnobaev ◽  
A.A. Malinin ◽  
V.V. Kireiko ◽  
V.V. Starkov ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Irradiation ◽  
Epitaxial Regrowth
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