Electronic properties of a one‐dimensional channel field effect transistor formed by molecular beam epitaxial regrowth on patterned GaAs
Keyword(s):
1993 ◽
Vol 11
(3)
◽
pp. 601
◽
1989 ◽
Vol 7
(4)
◽
pp. 680
◽
2013 ◽
Vol 31
(4)
◽
pp. 041203
◽
Keyword(s):