Epitaxial growth of rare‐earth silicides on (111) Si

ABSTRACTHigh-dielectric constant (high-κ) oxide growth on hexagonal-GaN (on sapphire) is examined for potential use in enhancement-mode metal oxide semiconductor field effect transistor (MOSFET). Enhancement-mode MOSFET devices (ns > 4×1013 cm−2) offer significant performance advantages, such as greater efficiency and scalability, as compared to heterojunction field effect transistor (HFET) devices for use in high power and high frequency GaN-based devices. High leakage current and current collapse at high drive conditions suggests that the use of a high-κ insulating layer is principle for enhancement-mode MOSFET development. In this work, rare earth oxides (Sc, La, etc.) are explored due to their ideal combination of permittivity and high band gap energy. However, a substantial lattice mismatch (9-21%) between the rare earth oxides and the GaN substrate results in mid-gap defect state densities and growth dislocations. The epitaxial growth of the rare earth oxides by molecular beam epitaxy (MBE) on native oxide passivated-GaN is examined in an effort to minimize these growth related defects and other growth-related limitations. Growth of the oxide on GaN is characterized analytically by RHEED, XRD, and XPS. Preliminary MOS electrical analysis of a 50 Å La2O3 on GaN shows superior leakage performance as compared to significantly thicker Si3N4 dielectric.

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Magnetic and transport properties of rare earth silicides RSi2−

Journal of Magnetism and Magnetic Materials ◽

10.1016/0304-8853(92)90551-x ◽

1992 ◽

Vol 104-107 ◽

pp. 1207-1208 ◽

Cited By ~ 6

Author(s):

J. Pierre ◽

S. Auffret ◽

B. Lambert-Andron ◽

R. Madar ◽

A.P. Murani ◽

...

Keyword(s):

Rare Earth ◽

Transport Properties ◽

Rare Earth Silicides

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Phase selection in the rare earth silicides

Physical Review B ◽

10.1103/physrevb.82.174112 ◽

2010 ◽

Vol 82 (17) ◽

Cited By ~ 7

Author(s):

C. Eames ◽

M. Reakes ◽

S. P. Tear ◽

T. C. Q. Noakes ◽

P. Bailey

Keyword(s):

Rare Earth ◽

Phase Selection ◽

Rare Earth Silicides ◽

The Rare Earth

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Epitaxial Growth of Solution-Based Rare-Earth Niobate, RE3NbO7, Films on Biaxially Textured Ni–W Substrates

Journal of Materials Research ◽

10.1557/jmr.2005.0011 ◽

2005 ◽

Vol 20 (1) ◽

pp. 6-9 ◽

Cited By ~ 10

Author(s):

M. Paranthaman ◽

M.S. Bhuiyan ◽

S. Sathyamurthy ◽

H.Y. Zhai ◽

A. Goyal ◽

...

Keyword(s):

Rare Earth ◽

Critical Current Density ◽

Epitaxial Growth ◽

Chemical Solution Deposition ◽

Ybco Film ◽

Pulsed Laser ◽

Buffer Layers ◽

Laser Deposition ◽

Chemical Solution ◽

Solution Deposition

A new series of rare earth-niobate, RE3NbO7 (RE=Y,Gd,Eu), buffer layers were developed for the growth of superconducting YBa2Cu3O7−δ (YBCO) films on biaxially textured Ni–W (3 at.%) substrates. Using chemical solution deposition, smooth, crack-free, and epitaxial RE3NbO7 (RE = Y,Gd,Eu) films were grown on cube-textured Ni–W substrate. YBCO film with a critical current density of 1.1 × 106 A/cm2 in self-field at 77 K was grown directly on a single Gd3NbO7-buffered Ni–W substrate using pulsed laser deposition.

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