Epitaxial Growth of Solution-Based Rare-Earth Niobate, RE3NbO7, Films on Biaxially Textured Ni–W Substrates

2005 ◽  
Vol 20 (1) ◽  
pp. 6-9 ◽  
Author(s):  
M. Paranthaman ◽  
M.S. Bhuiyan ◽  
S. Sathyamurthy ◽  
H.Y. Zhai ◽  
A. Goyal ◽  
...  

A new series of rare earth-niobate, RE3NbO7 (RE=Y,Gd,Eu), buffer layers were developed for the growth of superconducting YBa2Cu3O7−δ (YBCO) films on biaxially textured Ni–W (3 at.%) substrates. Using chemical solution deposition, smooth, crack-free, and epitaxial RE3NbO7 (RE = Y,Gd,Eu) films were grown on cube-textured Ni–W substrate. YBCO film with a critical current density of 1.1 × 106 A/cm2 in self-field at 77 K was grown directly on a single Gd3NbO7-buffered Ni–W substrate using pulsed laser deposition.

2006 ◽  
Vol 21 (3) ◽  
pp. 767-773 ◽  
Author(s):  
M.S. Bhuiyan ◽  
M. Paranthaman ◽  
A. Goyal ◽  
L. Heatherly ◽  
D.B. Beach

Epitaxial films of rare-earth (RE = La, Ce, Eu, and Gd) tantalates, RE3TaO7 with pyrochlore structures were grown on biaxially textured nickel-3 at.% tungsten (Ni-W) substrates using chemical solution deposition (CSD) process. Precursor solution of 0.3∼0.4 M concentration of total cations were spin coated on to short samples of Ni-W substrates and the films were crystallized at 1050∼1100 °C in a gas mixture of Ar- 4% H2 for 15 to 60 min. X-ray studies show that the films of pyrochlore RE tantalate films are highly textured with cube-on-cube epitaxy. Improved texture was observed in case of lanthanum tantalate (La3TaO7) film grown on Ni-W substrates. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) investigations of RE3TaO7 films reveal a fairly dense and smooth microstructure without cracks and porosity. The rare-earth tantalate layers may be potentially used as buffer layers for YBa2Cu3O7-δ (YBCO) coated conductors.


2005 ◽  
Vol 868 ◽  
Author(s):  
M.S. Bhuiyan ◽  
M. Paranthaman ◽  
S. Sathyamurthy

AbstractWe have grown epitaxial rare earth niobate (RE3NbO7; RE – La, Ce, Nd, Sm, Eu, Gd, Ho, Y, and Yb) buffer layers on biaxially textured Ni-W substrates using chemical solution deposition approach. Precursor solutions of 0.4 M total cation concentration were spin coated on short samples of Ni-3 at.%W (Ni-W) substrates and heat-treated at 1050 to 1100°C in a gas mixture of Ar-4%H2 for 15 minutes. Effect of solution chemistry and processing atmosphere on texture and microstructure were studied. Detailed X-Ray studies indicated that all the rare earth niobates were grown epitaxially. There was no significant change observed in texture for different precursor chemistry, however, dramatic effect on surface morphology observed. SEM and AFM investigations of RE3NbO7 films reveal noticeable difference in surface morphology and roughness for various processing atmospheres. Processing under a 20% wet Ar-4% H2 gas mixture was found to be the optimum condition for growing Gd3NbO7 films with high quality microstructure.


1991 ◽  
Vol 243 ◽  
Author(s):  
K. Nashimoto ◽  
D. K. Fork ◽  
F. A. Ponce ◽  
T. H. Geballe

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.


2013 ◽  
Vol 566 ◽  
pp. 187-190
Author(s):  
Keiichi Sasajima ◽  
Hiroshi Uchida

Thin films of (La,Sr)MnO3 (LSMO) were fabricated by industrial-versatile chemical solution deposition (CSD) technique. Well [100]-oriented LSMO films were fabricated at 650-750 °C by use of buffer layers of LaNiO3 buffer layer on a silicon substrate. The product of lower electrical resistivity is promising as an electrode of fatigue-free ferroelectric capacitor.


2007 ◽  
Vol 17 (4) ◽  
pp. 3880-3885 ◽  
Author(s):  
Xuebin Zhu ◽  
Hechang Lei ◽  
Dongqi Shi ◽  
Li Zhang ◽  
Lin Wang ◽  
...  

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