ScienceGate
Advanced Search
Author Search
Journal Finder
Blog
Sign in / Sign up
ScienceGate
Search
Author Search
Journal Finder
Blog
Sign in / Sign up
Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices
Journal of Applied Physics
◽
10.1063/5.0008758
◽
2020
◽
Vol 127
(21)
◽
pp. 215707
◽
Cited By ~ 2
Author(s):
Yuxuan Zhang
◽
Zhaoying Chen
◽
Wenbo Li
◽
Hyunsoo Lee
◽
Md Rezaul Karim
◽
...
Keyword(s):
Impurity Incorporation
◽
Power Devices
◽
Fe Impurity
Download Full-text
Related Documents
Cited By
References
Mechanism of fe impurity incorporation into semi-insulating gaas crystals
Journal of Electronic Materials
◽
10.1007/bf02650864
◽
1983
◽
Vol 12
(3)
◽
pp. 563-573
Author(s):
T. Udagawa
◽
A. Tanaka
◽
T. Nakanisi
Keyword(s):
Impurity Incorporation
◽
Fe Impurity
Download Full-text
Possibility of Reducing The On-resistance in 1 kV-class Lateral Superjunction Power Devices based on III-V Semiconductors
IEEJ Transactions on Electronics Information and Systems
◽
10.1541/ieejeiss.139.1015
◽
2019
◽
Vol 139
(9)
◽
pp. 1015-1019
Author(s):
Tomoyoshi Kushida
◽
Hiroyuki Sakaki
Keyword(s):
Power Devices
Download Full-text
International Standardization on Superconducting Power Devices
The Journal of the Institute of Electrical Engineers of Japan
◽
10.1541/ieejjournal.134.558
◽
2014
◽
Vol 134
(8)
◽
pp. 558-559
Author(s):
Koki TSUNODA
◽
Teruo MATSUSHITA
Keyword(s):
Power Devices
◽
International Standardization
Download Full-text
Semiconductor devices � Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices
10.3403/30366380
◽
2019
◽
Keyword(s):
Silicon Carbide
◽
Semiconductor Devices
◽
Power Devices
◽
Non Destructive
Download Full-text
Semiconductor devices � Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices
10.3403/30351626
◽
2019
◽
Keyword(s):
Silicon Carbide
◽
Semiconductor Devices
◽
Power Devices
◽
Non Destructive
Download Full-text
Semiconductor devices � Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices
10.3403/30382425u
◽
2020
◽
Keyword(s):
Silicon Carbide
◽
Semiconductor Devices
◽
Power Devices
◽
Non Destructive
Download Full-text
Defect engineering in SiC technology for high-voltage power devices
Applied Physics Express
◽
10.35848/1882-0786/abc787
◽
2020
◽
Vol 13
(12)
◽
pp. 120101
Author(s):
Tsunenobu Kimoto
◽
Heiji Watanabe
Keyword(s):
High Voltage
◽
Defect Engineering
◽
Power Devices
Download Full-text
Steady-state and transient electro-thermal simulation of power devices and MMICs based on 3D physical thermal models
China-Ireland International Conference on Information and Communications Technologies (CIICT 2007)
◽
10.1049/cp:20070804
◽
2007
◽
Author(s):
J. Ding
◽
D. Linton
Keyword(s):
Steady State
◽
Thermal Simulation
◽
Power Devices
◽
Thermal Models
Download Full-text
Analysis of power devices breakdown behaviour by ion beam and electron beam induced charge microscopy
9th International Seminar on Power Semiconductors (ISPS 2008)
◽
10.1049/ic:20080194
◽
2008
◽
Cited By ~ 3
Author(s):
R. Siemieniec
◽
A. Pugatschow
◽
C. Geissler
◽
H.-J. Schulze
◽
F.-J. Niedernostheide
◽
...
Keyword(s):
Electron Beam
◽
Ion Beam
◽
Power Devices
◽
Induced Charge
Download Full-text
Architecture Choice for Radiation-Hard AlGaN/GaN HEMT Power Devices
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
◽
10.1109/radecs.2017.8696192
◽
2017
◽
Author(s):
D. Wellekens
◽
S. Stoffels
◽
A. Luu
◽
M. Haussy
◽
M. Melotte
◽
...
Keyword(s):
Power Devices
◽
Gan Hemt
◽
Radiation Hard
Download Full-text
Sign in / Sign up
Close
Export Citation Format
Close
Share Document
Close