9th International Seminar on Power Semiconductors (ISPS 2008)
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Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Analysis of field-plate LDMOS devices for RF applications

2008 ◽  
Author(s):  
I. Cortes ◽  
D. Flores ◽  
F. Morancho ◽  
S. Hidalgo ◽  
J. Rebollo
Keyword(s):  
Field Plate ◽  
Rf Applications

New self-controlled and self-protected integrated power switch

2008 ◽  
Author(s):  
F. Capy ◽  
M. Breil ◽  
F. Richardeau ◽  
A. Bourennane ◽  
J.P. Laur ◽  
...  
Keyword(s):  
Power Switch

Analysis of power devices breakdown behaviour by ion beam and electron beam induced charge microscopy

2008 ◽  
Author(s):  
R. Siemieniec ◽  
A. Pugatschow ◽  
C. Geissler ◽  
H.-J. Schulze ◽  
F.-J. Niedernostheide ◽  
...  
Keyword(s):  
Electron Beam ◽  
Ion Beam ◽  
Power Devices ◽  
Induced Charge

Advanced design of AlGaN/GaN HEMTs employing mesa field plate for high breakdown voltage

2008 ◽  
Author(s):  
Kyu-Heon Cho ◽  
Young-Hwan Choi ◽  
Jiyong Lim ◽  
Young-Shil Kim ◽  
Min-Koo Han
Keyword(s):  
Breakdown Voltage ◽  
Field Plate ◽  
High Breakdown Voltage ◽  
Gan Hemts

Negative bias temperature stress and annealing effects in p-channel power VDMOSFETs

2008 ◽  
Author(s):  
D. Dankovic ◽  
I. Manic ◽  
V. Davidovic ◽  
S. Djoric-Veljkovic ◽  
S. Golubovic ◽  
...  
Keyword(s):  
Temperature Stress ◽  
Negative Bias ◽  
Channel Power ◽  
Annealing Effects ◽  
Bias Temperature Stress

Investigation on split-gate RSO MOSFET for 30 V breakdown

2008 ◽  
Author(s):  
C.F. Tong ◽  
P.A. Mawby ◽  
J.A. Covington ◽  
A. Perez-Tomas
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