Analysis of power devices breakdown behaviour by ion beam and electron beam induced charge microscopy

Abstract The Ion Beam Induced Charge (IBIC) imaging technique is compared with the conventional Electron Beam Induced Current (EBIC) imaging. The IBIC images were found to be strongly dependent on the ion beam energy and ion beam induced degradation. EBIC images are influenced by overlying metal layers while in the case of IBIC, the choice of ion type and energy determine whether the overlying metal layers influence the IBIC image or not. Ion beam induced degradation, an undesirable feature, was found to be improving images in certain cases.

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Nucleation and Early Growth of Sputtered thin Films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069570 ◽

1970 ◽

Vol 28 ◽

pp. 516-517

Author(s):

Dudley M. Sherman ◽

Thos. E. Hutchinson

Keyword(s):

Thin Films ◽

Electron Beam ◽

Ion Beam ◽

Ion Source ◽

Water Cooling ◽

Stages Of Growth ◽

Lens Assembly ◽

Microscope Technique ◽

Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

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Nanoscale Self-Assembly Using Ion and Electron Beam Techniques: A Rapid Review

MRS Advances ◽

10.1557/adv.2020.349 ◽

2020 ◽

Vol 5 (64) ◽

pp. 3507-3520

Author(s):

Chunhui Dai ◽

Kriti Agarwal ◽

Jeong-Hyun Cho

Keyword(s):

Electron Beam ◽

Self Assembly ◽

Ion Beam ◽

Three Dimensional ◽

The Self ◽

Stress Generation ◽

Rapid Review ◽

High Yield ◽

3D Nanostructures ◽

Self Assembled

AbstractNanoscale self-assembly, as a technique to transform two-dimensional (2D) planar patterns into three-dimensional (3D) nanoscale architectures, has achieved tremendous success in the past decade. However, an assembly process at nanoscale is easily affected by small unavoidable variations in sample conditions and reaction environment, resulting in a low yield. Recently, in-situ monitored self-assembly based on ion and electron irradiation has stood out as a promising candidate to overcome this limitation. The usage of ion and electron beam allows stress generation and real-time observation simultaneously, which significantly enhances the controllability of self-assembly. This enables the realization of various complex 3D nanostructures with a high yield. The additional dimension of the self-assembled 3D nanostructures opens the possibility to explore novel properties that cannot be demonstrated in 2D planar patterns. Here, we present a rapid review on the recent achievements and challenges in nanoscale self-assembly using electron and ion beam techniques, followed by a discussion of the novel optical properties achieved in the self-assembled 3D nanostructures.

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Fin Level Defect Isolation Inside a FinFET Using Electron Beam Alteration of Current Flow

ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2017p0473 ◽

2017 ◽

Author(s):

H.J. Ryu ◽

A.B. Shah ◽

Y. Wang ◽

W.-H. Chuang ◽

T. Tong

Keyword(s):

Electron Microscopy ◽

Electron Beam ◽

Focused Ion Beam ◽

Current Flow ◽

Ion Beam ◽

The Body ◽

Complete Understanding ◽

Root Cause ◽

Transmission Electron ◽

Defect Isolation

Abstract When failure analysis is performed on a circuit composed of FinFETs, the degree of defect isolation, in some cases, requires isolation to the fin level inside the problematic FinFET for complete understanding of root cause. This work shows successful application of electron beam alteration of current flow combined with nanoprobing for precise isolation of a defect down to fin level. To understand the mechanism of the leakage, transmission electron microscopy (TEM) slice was made along the leaky drain contact (perpendicular to fin direction) by focused ion beam thinning and lift-out. TEM image shows contact and fin. Stacking fault was found in the body of the silicon fin highlighted by the technique described in this paper.

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In-Situ Dual Beam (FIBSEM) Techniques for Probe Pad Deposition and Dielectric Integrity Inspection in 0.2 μm Technology DRAM Single Cells

ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1999p0311 ◽

1999 ◽

Author(s):

Gunnar Zimmermann ◽

Richard Chapman

Keyword(s):

Electron Beam ◽

Single Cell ◽

Single Cells ◽

Ion Beam ◽

Gate Oxide ◽

Ion Milling ◽

Dual Beam ◽

Sem Imaging ◽

Innovative Techniques

Abstract Dual beam FIBSEM systems invite the use of innovative techniques to localize IC fails both electrically and physically. For electrical localization, we present a quick and reliable in-situ FIBSEM technique to deposit probe pads with very low parasitic leakage (Ipara < 4E-11A at 3V). The probe pads were Pt, deposited with ion beam assistance, on top of highly insulating SiOx, deposited with electron beam assistance. The buried plate (n-Band), p-well, wordline and bitline of a failing and a good 0.2 μm technology DRAM single cell were contacted. Both cells shared the same wordline for direct comparison of cell characteristics. Through this technique we electrically isolated the fail to a single cell by detecting leakage between the polysilicon wordline gate and the cell diffusion. For physical localization, we present a completely in-situ FIBSEM technique that combines ion milling, XeF2 staining and SEM imaging. With this technique, the electrically isolated fail was found to be a hole in the gate oxide at the bad cell.

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Carbon Coating for Electron Beam Testing and Focus Ion Beam Reconfiguration

ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1996p0333 ◽

1996 ◽

Author(s):

P. Perdu ◽

G. Perez ◽

M. Dupire ◽

B. Benteo

Keyword(s):

Electron Beam ◽

Sample Preparation ◽

Carbon Coating ◽

Focused Ion Beam ◽

Sacrificial Layer ◽

Ion Beam ◽

Electrical Characterization ◽

Fault Analysis ◽

Voltage Contrast ◽

The Right

Abstract To debug ASIC we likely use accurate tools such as an electron beam tester (Ebeam tester) and a Focused Ion Beam (FIB). Interactions between ions or electrons and the target device build charge up on its upper glassivation layer. This charge up could trigger several problems. With Ebeam testing, it sharply decreases voltage contrast during Image Fault Analysis and hide static voltage contrast. During ASIC reconfiguration with FIB, it could induce damages in the glassivation layer. Sample preparation is getting a key issue and we show how we can deal with it by optimizing carbon coating of the devices. Coating is done by an evaporator. For focused ion beam reconfiguration, we need a very thick coating. Otherwise the coating could be sputtered away due to imaging. This coating is use either to avoid charge-up on glassivated devices or as a sacrificial layer to avoid short circuits on unglassivated devices. For electron beam Testing, we need a very thin coating, we are now using an electrical characterization method with an insitu control system to obtain the right thin thickness. Carbon coating is a very cheap and useful method for sample preparation. It needs to be tuned according to the tool used.

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