Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices

2021 ◽  
Vol 129 (18) ◽  
pp. 184501
Author(s):  
Rigo A. Carrasco ◽  
Christian P. Morath ◽  
Perry C. Grant ◽  
Gamini Ariyawansa ◽  
Chad A. Stephenson ◽  
...  
1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.


1985 ◽  
Vol 72 (1-2) ◽  
pp. 270-274 ◽  
Author(s):  
Toshiro Yamamoto ◽  
Yoshihiro Miyamoto ◽  
Kunihiro Tanikawa

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