Relaxation dynamics of hot electrons in the transition metals Au, Ag, Cu, Pt, Pd, and Ni studied by ultrafast luminescence spectroscopy

2021 ◽  
Vol 130 (2) ◽  
pp. 025101
Author(s):  
T. Suemoto ◽  
K. Yamanaka ◽  
N. Sugimoto ◽  
Y. Kobayashi ◽  
T. Otsu ◽  
...  
2019 ◽  
Vol 100 (3) ◽  
Author(s):  
Hiroshi Tanimura ◽  
Jun'ichi Kanasaki ◽  
Katsumi Tanimura ◽  
Jelena Sjakste ◽  
Nathalie Vast

2007 ◽  
Vol 11 (04) ◽  
pp. 228-243 ◽  
Author(s):  
Umakanta Tripathy ◽  
Ronald P. Steer

Photophysical processes involving the higher electronic excited states of diamagnetic porphyrins and metalloporphyrins are critically reviewed. Intramolecular electronic relaxation of one-photon Soret-excited molecules in solution is now known to involve processes other than S 2 - S 1 internal conversion; dark electronic states are implicated. Sequential two-photon excitation to produce gerade excited singlet states ( S n , n > 2) results in relaxation dynamics that are quantitatively different from those resulting from one-photon excitation to ungerade states of about the same energy. Intermolecular electron and electronic energy transfer involving Soret-excited metalloporphyrins and intramolecular electron and electronic energy transfer in Soret-excited dyads and larger arrays containing porphyrins are reviewed. Metalloporphyrins containing main group metals or transition metals with filled d orbitals exhibit relaxation dynamics that differ from metalloporphyrins containing transition metals with unfilled d orbitals. Non-linear phenomena associated with multi-photon excitation of diamagnetic metalloporphyrins are also reviewed.


2020 ◽  
Vol 2 (2) ◽  
Author(s):  
I. Avigo ◽  
F. Queisser ◽  
P. Zhou ◽  
M. Ligges ◽  
K. Rossnagel ◽  
...  

2000 ◽  
Vol 09 (02) ◽  
pp. 127-150 ◽  
Author(s):  
KENT C. BURR ◽  
C. L. TANG

Time-resolved two-photon induced luminescence spectroscopy is used to study the relaxation dynamics of holes in GaAs following valence-to-conduction band femtosecond pulse excitation in the near-infrared and heavy- and light-hole to split-off resonant transitions in the mid-infrared. It is shown that there is a rapid change in the electron and hole temperatures due to thermalization of the carrier distributions in the valence and conduction bands and that the collisions between the electrons and heavy holes are not elastic when scattering to the light hole band is possible. The lifetime of the split-off holes near the zone center is within the limits of 40 to 80 femtoseconds at room temperature.


Author(s):  
R.W. Carpenter

Interest in precipitation processes in silicon appears to be centered on transition metals (for intrinsic and extrinsic gettering), and oxygen and carbon in thermally aged materials, and on oxygen, carbon, and nitrogen in ion implanted materials to form buried dielectric layers. A steadily increasing number of applications of microanalysis to these problems are appearing. but still far less than the number of imaging/diffraction investigations. Microanalysis applications appear to be paced by instrumentation development. The precipitation reaction products are small and the presence of carbon is often an important consideration. Small high current probes are important and cryogenic specimen holders are required for consistent suppression of contamination buildup on specimen areas of interest. Focussed probes useful for microanalysis should be in the range of 0.1 to 1nA, and estimates of spatial resolution to be expected for thin foil specimens can be made from the curves shown in Fig. 1.


2000 ◽  
Vol 10 (PR7) ◽  
pp. Pr7-227-Pr7-232 ◽  
Author(s):  
B. Jérôme ◽  
E. Cecchetto ◽  
N. R. de Souza ◽  
A. L. Demirel
Keyword(s):  

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