Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers
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2012 ◽
Vol 27
(4)
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pp. 045010
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2010 ◽
Vol 530
(1)
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pp. 131/[287]-136/[292]
1996 ◽
Vol 67
(11)
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pp. 3795-3798
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