High-k dielectrics based field plate edge termination engineering in 4H-SiC Schottky diode

2016 ◽  
Vol 103 (12) ◽  
pp. 2064-2074 ◽  
Author(s):  
Bhawani Shankar ◽  
Sanjeev K. Gupta ◽  
William R. Taube ◽  
J. Akhtar
Keyword(s):  
Schottky Diode ◽  
Plate Edge ◽  
Field Plate ◽  
Edge Termination ◽  
High K

Design rules for field plate edge termination in SiC Schottky diodes

2001 ◽  
Vol 48 (12) ◽  
pp. 2659-2664 ◽  
Author(s):  
M.C. Tarplee ◽  
V.P. Madangarli ◽  
Quinchun Zhang ◽  
T.S. Sudarshan
Keyword(s):  
Schottky Diodes ◽  
Plate Edge ◽  
Design Rules ◽  
Field Plate ◽  
Edge Termination

Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination

2000 ◽  
Vol 338-342 ◽  
pp. 1223-1226 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
M. Tarplee ◽  
Tangali S. Sudarshan
Keyword(s):  
Schottky Diodes ◽  
Plate Edge ◽  
Current Spreading ◽  
Field Plate ◽  
Edge Termination ◽  
Lateral Current

High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination

2021 ◽  
Vol 55 (2) ◽  
pp. 243-249
Author(s):  
P. A. Ivanov ◽  
N. M. Lebedeva ◽  
N. D. Il’inskaya ◽  
M. F. Kudoyarov ◽  
T. P. Samsonova ◽  
...  
Keyword(s):  
High Voltage ◽  
Schottky Diodes ◽  
Plate Edge ◽  
Field Plate ◽  
Edge Termination

Design and Characterization of the Deep-Trench, U-Shaped Field-Plate Edge Termination for 1200-V-Class SiC Devices

2019 ◽  
Vol 66 (10) ◽  
pp. 4251-4257 ◽  
Author(s):  
Yong Liu ◽  
Wentao Yang ◽  
Hao Feng ◽  
Linhua Huang ◽  
Yuichi Onozawa ◽  
...  
Keyword(s):  
Plate Edge ◽  
Deep Trench ◽  
Field Plate ◽  
Edge Termination

A novel metal field plate edge termination for power devices

2001 ◽  
Vol 32 (4) ◽  
pp. 323-326 ◽  
Author(s):  
J.V. Subhas Chandra Bose ◽  
M.M. De Souza ◽  
E.M. Sankara Narayanan ◽  
G. Ensell ◽  
T.J. Pease ◽  
...  
Keyword(s):  
Power Devices ◽  
Plate Edge ◽  
Field Plate ◽  
Edge Termination

First Demonstration of β-Ga2O3 Schottky Barrier Diode with Field Plate Edge Termination

2015 ◽  
Author(s):  
K. Sasaki ◽  
M. Higashiwaki ◽  
K. Goto ◽  
K. Nomura ◽  
Q.T. Thieu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Plate Edge ◽  
Field Plate ◽  
Edge Termination

A Study of Oxide Etch Angle of Edge Termination Field Plate for Fabrication of SiC SBD

2017 ◽  
Vol 730 ◽  
pp. 102-105
Author(s):  
Ey Goo Kang
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Breakdown Voltage ◽  
Dielectric Breakdown ◽  
Power Semiconductor ◽  
Field Plate ◽  
Edge Termination ◽  
Power Semiconductor Devices ◽  
Silicon Materials ◽  
Generation Power

The silicon carbide (SiC) material is being spotlighted as a next-generation power semiconductor material due to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in the conventional power semiconductor devices. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. The experiment results indicated that oxide etch angle was 45° when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681V was obtained.

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