Suspended slotline on magnetized ferrite and anisotropic dielectric substrates

1991 ◽  
Vol 71 (3) ◽  
pp. 457-462 ◽  
Author(s):  
PEIJUE XUN ◽  
QINGYUAN WANG ◽  
SHAOBIN LIU ◽  
SHANFU YU ◽  
SHENGGANG LlU
1988 ◽  
Author(s):  
M. R. M. Albuquerque ◽  
A. J. Giarola ◽  
A. G. d'Assuncao ◽  
M. R. Maia

1991 ◽  
Vol 12 (4) ◽  
pp. 377-387
Author(s):  
Peijue Xun ◽  
Yi Chen ◽  
Xiaozhong Chen ◽  
Shenggang Liu

1989 ◽  
Vol 25 (4) ◽  
pp. 2944-2946 ◽  
Author(s):  
M.R.M.L. Albuquerque ◽  
A.G. D'Assuncao ◽  
M.R.G. Maia ◽  
A.J. Giarola

2010 ◽  
Vol 19 (04) ◽  
pp. 613-619
Author(s):  
L. GUMEN ◽  
NAGARAJ ◽  
A. NEOGI ◽  
A. KROKHIN

We calculate the propagation length of surface plasmons in metal-dielectric structures with anisotropic substrates. We show that the Joule losses can be minimized by appropriate orientation of the optical axis of a birefringent substrate and that the favorable orientation of the axis depends on ω. A simple Kronig-Penney model for anisotropic plasmonic crystal is also proposed.


2002 ◽  
Vol 7 (2) ◽  
pp. 45-52
Author(s):  
L. Jakučionis ◽  
V. Kleiza

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.


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