Power-added efficiency errors with RF power amplifiers

1997 ◽  
Vol 82 (3) ◽  
pp. 303-312 ◽  
Author(s):  
STEPAN LUCYSZYN
Keyword(s):  
Power Amplifiers ◽  
Rf Power Amplifiers ◽  
Rf Power ◽  
Power Added Efficiency

AlN/GaN MISHEMTs on Si with in-situ SiN as gate dielectric for power amplifiers in mobile SoCs

2021 ◽  
Author(s):  
Hanlin Xie ◽  
Zhihong Liu ◽  
Wenrui Hu ◽  
Yu Gao ◽  
Hui Teng Tan ◽  
...  
Keyword(s):  
Power Amplifiers ◽  
Gate Dielectric ◽  
Rf Power Amplifiers ◽  
Maximum Output ◽  
High Electron ◽  
Rf Power ◽  
Power Added Efficiency ◽  
5 Ghz ◽  
Mobile Soc

Abstract AlN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using in-situ SiN as gate dielectric were fabricated and their RF power performance at mobile system-on-chip (SoC) compatible voltages was measured. At a mobile SoC-compatible supply voltage of Vd = 3.5 V/5 V, the 90-nm gate-length AlN/GaN MISHEMTs showed a maximum power-added efficiency (PAE) of 62%/58%, a maximum output power density (Poutmax) of 0.44 W/mm/0.84 W/mm and a linear gain of 20 dB/19 dB at the frequency of 5 GHz. These results suggest that the in-situ-SiN/AlN/GaN-on-Si MISHEMTs are promising for RF power amplifiers in 5G mobile SoC applications.

Analysis of RF power amplifiers in LINC systems

2012 ◽  
Vol 4 (1) ◽  
pp. 81-91 ◽  
Author(s):  
Ronald Montesinos ◽  
Corinne Berland ◽  
Mazen Abi Hussein ◽  
Olivier Venard ◽  
Philippe Descamps
Keyword(s):  
Power Amplifiers ◽  
Average Power ◽  
High Electron Mobility Transistor ◽  
Rf Power Amplifiers ◽  
High Electron ◽  
Error Vector Magnitude ◽  
Rf Power ◽  
Power Added Efficiency ◽  
Rf Transmitters ◽  
The Impact

LInear amplification using Non-linear Components (LINC) is an architecture that achieves linear power amplification for radio-frequency (RF) transmitters. This paper describes the impact of RF power amplifiers (PAs) class on the overall system performances. The linearity and efficiency of the LINC transmitter with different PA classes (AB, B, C, D, E, F, F−1, and J) are evaluated and compared, in terms of error vector magnitude (EVM), adjacent channel leakage ratio (ACLR), and power added efficiency (PAE), for a 16QAM modulation having 5.6 dB peak to average power ratio. Simulations are performed using a gallium-nitride high electron mobility transistor (GaN HEMT) for a power amplifier with an output power of 10 W at 900 MHz.

scholarly journals Gaussian Pulse Characterization of RF Power Amplifiers

2021 ◽  
Vol 31 (4) ◽  
pp. 417-420
Author(s):  
Tommaso Cappello ◽  
Zoya Popovic ◽  
Kevin Morris ◽  
Angelo Cappello
Keyword(s):  
Power Amplifiers ◽  
Gaussian Pulse ◽  
Rf Power Amplifiers ◽  
Rf Power ◽  
Pulse Characterization
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