AlN/GaN MISHEMTs on Si with in-situ SiN as gate dielectric for power amplifiers in mobile SoCs

Abstract AlN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using in-situ SiN as gate dielectric were fabricated and their RF power performance at mobile system-on-chip (SoC) compatible voltages was measured. At a mobile SoC-compatible supply voltage of Vd = 3.5 V/5 V, the 90-nm gate-length AlN/GaN MISHEMTs showed a maximum power-added efficiency (PAE) of 62%/58%, a maximum output power density (Poutmax) of 0.44 W/mm/0.84 W/mm and a linear gain of 20 dB/19 dB at the frequency of 5 GHz. These results suggest that the in-situ-SiN/AlN/GaN-on-Si MISHEMTs are promising for RF power amplifiers in 5G mobile SoC applications.

Download Full-text

Analysis of RF power amplifiers in LINC systems

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078711001085 ◽

2012 ◽

Vol 4 (1) ◽

pp. 81-91 ◽

Cited By ~ 2

Author(s):

Ronald Montesinos ◽

Corinne Berland ◽

Mazen Abi Hussein ◽

Olivier Venard ◽

Philippe Descamps

Keyword(s):

Power Amplifiers ◽

Average Power ◽

High Electron Mobility Transistor ◽

Rf Power Amplifiers ◽

High Electron ◽

Error Vector Magnitude ◽

Rf Power ◽

Power Added Efficiency ◽

Rf Transmitters ◽

The Impact

LInear amplification using Non-linear Components (LINC) is an architecture that achieves linear power amplification for radio-frequency (RF) transmitters. This paper describes the impact of RF power amplifiers (PAs) class on the overall system performances. The linearity and efficiency of the LINC transmitter with different PA classes (AB, B, C, D, E, F, F−1, and J) are evaluated and compared, in terms of error vector magnitude (EVM), adjacent channel leakage ratio (ACLR), and power added efficiency (PAE), for a 16QAM modulation having 5.6 dB peak to average power ratio. Simulations are performed using a gallium-nitride high electron mobility transistor (GaN HEMT) for a power amplifier with an output power of 10 W at 900 MHz.

Download Full-text

Power-added efficiency errors with RF power amplifiers

International Journal of Electronics ◽

10.1080/002072197136110 ◽

1997 ◽

Vol 82 (3) ◽

pp. 303-312 ◽

Cited By ~ 7

Author(s):

STEPAN LUCYSZYN

Keyword(s):

Power Amplifiers ◽

Rf Power Amplifiers ◽

Rf Power ◽

Power Added Efficiency

Download Full-text

An Analytic Design Approach to Inverse Class-F RF Power Amplifiers

Engineering and Technology Journal ◽

10.30684/etj.v38i2a.301 ◽

2020 ◽

Vol 38 (2A) ◽

pp. 211-225

Author(s):

Firas M. Ali ◽

Mahmuod H. Al-Muifraje ◽

Thamir R. Saeed

Keyword(s):

Power Amplifiers ◽

High Efficiency ◽

Power Device ◽

Rf Power Amplifiers ◽

Harmonic Load ◽

High Electron ◽

Rf Power ◽

Large Signal ◽

Active Device ◽

Class F

The design of high efficiency inverse class-F (class-F-1) radio frequency (RF) power amplifiers includes extensive measurements to characterize the RF power device by means of the empirical load-pull test setup. This paper presents an alternative characterization approach based on evaluating the load impedances analytically at the desired harmonic frequencies for a high electron mobility transistor (HEMT) in terms of the internal and package elements of the active device. It additionally provides a method for extracting the parasitic elements of the power device as well as determining the optimum load-line resistance using the transistor manufacturer’s large signal model. A new topology for the output matching circuit is also proposed with its synthetic procedure to present the appropriate harmonic load impedances. To verify this methodology, a 900 MHz inverse class-F power amplifier circuit was designed and its performance was tested with the aid of the Keysight ADS software. The simulation results showed an output power of 38 dBm, a power gain of about 13 dB, DC-to-RF efficiency greater than 87%, and an acceptable level of linearity for both GSM and CDMA modulated signals.

Download Full-text