Relaxation of electrons following trapping in the space-charge-limited conduction regime of n + -i-n + hydrogenated amorphous silicon structures

2002 ◽  
Vol 82 (5) ◽  
pp. 303-312 ◽  
Author(s):  
R. Meaudre ◽  
M. Meaudre
Keyword(s):  
Space Charge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Space Charge Limited Conduction ◽  
Silicon Structures ◽  
Hydrogenated Amorphous ◽  
Limited Conduction ◽  
Space Charge Limited

Theoretical Analysis of Sweep-Out Experiments in Doped Hydrogenated Amorphous Silicon Films

1987 ◽  
Vol 95 ◽  
Author(s):  
Marvin Silver ◽  
Howard M. Branz ◽  
David Adler
Keyword(s):  
Space Charge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Current Response ◽  
Electronic Density ◽  
Initial Space ◽  
Limited Current ◽  
P Type ◽  
Hydrogenated Amorphous ◽  
Space Charge Limited

AbstractWe analyze the transient response of i/n/i and i/p/i semiconductor structures in terms of space-charge-limited and emission-limited currents. In this ‘sweep-out’ experiment, an initial space-charge-limited current governed by the i-layer characteristics gives way at later times to an emission-limited current from the doped layer. The emission-limited current response can be used as a new spectroscopy for determining the electronic density of states near the mobility edge of doped semiconductors. We summarize the published experimental sweep-out data and draw conclusions about the density of electronic states of both n-type and p-type hydrogenated amorphous silicon.

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