Transient space‐charge‐limited currents: The time‐of‐flight and post‐transit analysis in hydrogenated amorphous silicon

1994 ◽  
Vol 64 (22) ◽  
pp. 3009-3011 ◽  
Author(s):  
F. Schauer ◽  
A. Eliat ◽  
M. Nesládek ◽  
G. J. Adriaenssens
Keyword(s):  
Space Charge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Time Of Flight ◽  
Hydrogenated Amorphous ◽  
Space Charge Limited Currents ◽  
Space Charge Limited

Probing the Densities of Gap States in Intrinsic a-Si:H Using Space Charge Limited Currents of Electrons and Holes

1990 ◽  
Vol 192 ◽  
Author(s):  
Robin M. Dawson ◽  
J. H. Smith ◽  
C. R. Wronski
Keyword(s):  
Space Charge ◽  
Density Of States ◽  
Carrier Transport ◽  
Hydrogenated Amorphous Silicon ◽  
Wide Range ◽  
Self Consistent ◽  
Gap States ◽  
Hydrogenated Amorphous ◽  
Space Charge Limited Currents ◽  
Space Charge Limited

ABSTRACTSpace charge limited currents of holes in intrinsic hydrogenated amorphous silicon (a-Si:H) have been obtained using novel p+-intrinsic-p+ (p-i-p) structures. The presence of these hole space charge limited currents is verified from their temperature dependence and their dependence on a wide range of intrinsic layer thickness. The carrier transport and space charge limited currents in the p-i-p structures are compared with those of n-i-n structures and the results are discussed in terms of a self consistent density of states in the gap.

Electron and Hole Transient Currents in Hydrogenated Amorphous Silicon and Some Alloys Measured by The Photoconductive Time-of-Flight Technique

1998 ◽  
Vol 507 ◽  
Author(s):  
Astrid Eliat ◽  
Guy Adriaenssens ◽  
Baojie Yan
Keyword(s):  
Space Charge ◽  
Amorphous Silicon ◽  
Density Of States ◽  
Hydrogenated Amorphous Silicon ◽  
Time Of Flight ◽  
Relative Increase ◽  
High Light ◽  
Transient Currents ◽  
Fast Decrease ◽  
Hydrogenated Amorphous

ABSTRACTA series of pure hydrogenated amorphous silicon (a-Si:H) samples as well as carbon (aSi:C:H) and sulfur alloys (a-Si:S:H) were investigated by means of the photoconductive time-of-flight technique. Drift moblility (µd) measurements reveal a fast decrease of the electron µd upon C or S addition, while the hole µd does not change significantly. Contrary to the electron transients, hole transient currents do not show the typical space-charge-limited (SCL) features, even for high light intensities where these features are normally seen. SCL features are observed to disappear for electron transients as well in the a-Si:H alloys with increasing alloy content. Above results are all explained starting from the a-Si:H density of states (DOS) model where the valence band (VB) tail is much broader than the conduction band (CB) tail. Introducing additional disorder by alloying broadens both the VB and the CB tails while the relative increase of the CB tail is much greater than that of the VB tail.

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