Densities of states below midgap determined from the space‐charge‐limited currents of holes in intrinsic hydrogenated amorphous silicon

1991 ◽  
Vol 58 (3) ◽  
pp. 272-274 ◽  
Author(s):  
R. M. Dawson ◽  
C. R. Wronski ◽  
M. Bennett
Keyword(s):  
Space Charge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Densities Of States ◽  
Hydrogenated Amorphous ◽  
Space Charge Limited Currents ◽  
Space Charge Limited

Probing the Densities of Gap States in Intrinsic a-Si:H Using Space Charge Limited Currents of Electrons and Holes

1990 ◽  
Vol 192 ◽  
Author(s):  
Robin M. Dawson ◽  
J. H. Smith ◽  
C. R. Wronski
Keyword(s):  
Space Charge ◽  
Density Of States ◽  
Carrier Transport ◽  
Hydrogenated Amorphous Silicon ◽  
Wide Range ◽  
Self Consistent ◽  
Gap States ◽  
Hydrogenated Amorphous ◽  
Space Charge Limited Currents ◽  
Space Charge Limited

ABSTRACTSpace charge limited currents of holes in intrinsic hydrogenated amorphous silicon (a-Si:H) have been obtained using novel p+-intrinsic-p+ (p-i-p) structures. The presence of these hole space charge limited currents is verified from their temperature dependence and their dependence on a wide range of intrinsic layer thickness. The carrier transport and space charge limited currents in the p-i-p structures are compared with those of n-i-n structures and the results are discussed in terms of a self consistent density of states in the gap.

Theoretical Analysis of Sweep-Out Experiments in Doped Hydrogenated Amorphous Silicon Films

1987 ◽  
Vol 95 ◽  
Author(s):  
Marvin Silver ◽  
Howard M. Branz ◽  
David Adler
Keyword(s):  
Space Charge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Current Response ◽  
Electronic Density ◽  
Initial Space ◽  
Limited Current ◽  
P Type ◽  
Hydrogenated Amorphous ◽  
Space Charge Limited

AbstractWe analyze the transient response of i/n/i and i/p/i semiconductor structures in terms of space-charge-limited and emission-limited currents. In this ‘sweep-out’ experiment, an initial space-charge-limited current governed by the i-layer characteristics gives way at later times to an emission-limited current from the doped layer. The emission-limited current response can be used as a new spectroscopy for determining the electronic density of states near the mobility edge of doped semiconductors. We summarize the published experimental sweep-out data and draw conclusions about the density of electronic states of both n-type and p-type hydrogenated amorphous silicon.

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