Epitaxially grown ferroelectric thin film capacitors for sensing applications

1994 ◽  
Vol 5 (2) ◽  
pp. 119-131 ◽  
Author(s):  
Jun Rum Choi ◽  
Don Hee Lee ◽  
Sung Moon Cho
Keyword(s):  
Thin Film ◽  
Ferroelectric Thin Film ◽  
Sensing Applications ◽  
Thin Film Capacitors

BiFeO3-doped (K0.5,Na0.5)(Mn0.005,Nb0.995)O3 ferroelectric thin film capacitors for high energy density storage applications

2017 ◽  
Vol 110 (15) ◽  
pp. 152901 ◽  
Author(s):  
Sung Sik Won ◽  
Masami Kawahara ◽  
Lindsay Kuhn ◽  
Vineeth Venugopal ◽  
Jiyeon Kwak ◽  
...  
Keyword(s):  
Thin Film ◽  
Energy Density ◽  
Ferroelectric Thin Film ◽  
High Energy ◽  
High Energy Density ◽  
Thin Film Capacitors

scholarly journals Ferroelectric Thin-Film Capacitors and Piezoelectric Switches for Mobile Communication Applications

2009 ◽  
Vol 56 (8) ◽  
pp. 1505-1512 ◽  
Author(s):  
Mareike Klee ◽  
Marco Van Esch ◽  
Wilco Keur ◽  
B. Kumar ◽  
Linda Van Leuken-Peters ◽  
...  
Keyword(s):  
Thin Film ◽  
Mobile Communication ◽  
Ferroelectric Thin Film ◽  
Thin Film Capacitors

scholarly journals Detector pixel in dielectric bolometer mode based on ferroelectric thin film capacitors for uncooled infrared image sensor

2000 ◽  
Vol 120 (1) ◽  
pp. 15-19 ◽  
Author(s):  
Kazuhiko Hashimoto ◽  
Minoru Noda ◽  
Tomonori Mukaigawa ◽  
Ryuichi Kubo ◽  
Hidekazu Tanaka ◽  
...  
Keyword(s):  
Thin Film ◽  
Infrared Image ◽  
Ferroelectric Thin Film ◽  
Image Sensor ◽  
Thin Film Capacitors

Degradation mechanisms of SrBi2Ta2O9 ferroelectric thin film capacitors during forming gas annealing

2000 ◽  
Vol 31 (1-4) ◽  
pp. 341-350 ◽  
Author(s):  
Walter Hartner ◽  
Peter Bosk ◽  
Günther Schindler ◽  
Herbert Schroeder ◽  
Rainer Waser ◽  
...  
Keyword(s):  
Thin Film ◽  
Ferroelectric Thin Film ◽  
Degradation Mechanisms ◽  
Thin Film Capacitors

Nuclear Reaction Probe of Oxygen Vacancy Migration in Electrically Fatigued PZT Thin Film Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
R.L. Pfeffer ◽  
W.D. Wilber
Keyword(s):  
Thin Film ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Thin Film ◽  
Lead Zirconate ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Pt Electrodes ◽  
Yttrium Barium Cuprate ◽  
Yttrium Barium ◽  
Accuracy Of Measurement

ABSTRACTThe migration of oxygen vacancies and their entrapment near film-electrode interfaces has been proposed as a cause of fatigue (i.e., polarization weakening) in ferroelectric thin film capacitors. To test this idea, lead zirconate titanate (PZT) thin films were epitaxially deposited by laser ablation on LaAlO3 substrates with yttrium barium cuprate (YBCO) base electrodes. Thin film capacitors were formed by deposition of noble metal (Pt) cap electrodes; half of them were then electrically fatigued by repeated polarization reversals (108 cycles). The distributions of oxygen in the two halves were then compared by means of accelerator-based nuclear backscattering (using the narrow elastic resonance at 3.045 MeV in the scattering of 4He from 16O) throughout the bulk of the PZT films and especially right under the Pt electrodes. We were unable to detect any difference in the oxygen profiles to within the accuracy of measurement, which was about 1 % of the oxygen concentration. Compositional changes, at least involving oxygen, do not seem to be responsible for the striking electrical alterations seen in fatigued PZT.

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