Gap-state distribution in a-Si:H by modulated photocurrent: Shallow-state-deep-state conversion and temperature shift of the electron-transport path

1988 ◽  
Vol 58 (4) ◽  
pp. 411-420 ◽  
Author(s):  
G. Schumm ◽  
K. Nitsch ◽  
G. H. Bauer
2003 ◽  
Vol 762 ◽  
Author(s):  
M. Schmidt ◽  
A. Schoepke ◽  
O. Milch ◽  
Th. Lussky ◽  
W. Fuhs

AbstractWe report on a detailed study on gap-state distribution in thin amorphous silicon layers (a-Si:H) with film thicknesses between 5 nm and 20 nm on c-Si wafers performed by UV excited photoelectron spectroscopy (UV-PES). We measured how the work function, the gap state density, the position of the Fermi-level and the Urbach-energy depend on the layer thickness and the doping level of the ultra thin a-Si:H(n) layers. It was found, that for phosphorous doping the position of the Fermi level saturates at EF–EV=1.47 eV. This is achieved at a gas phase concentration of 10000 ppm PH3 in the SiH4/H2 mixture which was used for the PECVD deposition process. The variation of the doping level from 0 to 20000 ppm PH3 addition results in an increase of the Urbach energy from 65 meV to 101 meV and in an increase of the gap state density at midgap (EV-Ei= 0.86eV) from 3·1018 to 2·1019 cm-3eV-1.


1983 ◽  
Vol 59-60 ◽  
pp. 545-548 ◽  
Author(s):  
C.-Y. Huang ◽  
S. Guha ◽  
S.J. Hudgens
Keyword(s):  

1989 ◽  
Vol 60 (5) ◽  
pp. 713-720 ◽  
Author(s):  
F. Demichelis ◽  
G. Kaniadakis ◽  
R. Spagnolo ◽  
E. Tresso

2009 ◽  
Vol 113 (17) ◽  
pp. 7416-7423 ◽  
Author(s):  
Nan Wang ◽  
Hongmei Liu ◽  
Jianwei Zhao ◽  
Yanping Cui ◽  
Zhong Xu ◽  
...  

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