Analytical solution for solar cell model parameters from illuminated current-voltage characteristics

1995 ◽  
Vol 72 (4) ◽  
pp. 375-382 ◽  
Author(s):  
Q. X. Jia ◽  
K. Ebihara ◽  
T. Ikegami
2019 ◽  
Vol 85 ◽  
pp. 04004
Author(s):  
Andreea Săbăduş ◽  
Marius Paulescu

In this paper three different procedures for extracting the current-voltage characteristics of a crystalline photovoltaic module are studied. Each procedure is associated to a solar cell model characterized by a well-defined degree of complexity. The results emphasize that the simple models approximate the current-voltage characteristics of a solar cell as good as the more complex models. Even if all the procedures analysed in this paper approximate well the measured characteristics, the specific model parameters experience a large dispersion. From a broader perspective, the results raise a question mark on the ability of the current procedures to accurately extract the solar cell parameters.


1991 ◽  
Vol 34 (6) ◽  
pp. 553-558
Author(s):  
F. Caldararu ◽  
M. Caldararu ◽  
S. Nan ◽  
D. Nicolaescu ◽  
S. Vasile

2013 ◽  
Vol 103 (6) ◽  
pp. 061118 ◽  
Author(s):  
M. Jo ◽  
Y. Ding ◽  
T. Noda ◽  
T. Mano ◽  
Y. Sakuma ◽  
...  

1999 ◽  
Vol 557 ◽  
Author(s):  
E. Schroten ◽  
M. Zeman ◽  
R. A. C. M. M. van Swaaij ◽  
L. L. A. Vosteen ◽  
J. W. Metselaar

AbstractComputer simulations are reported of hydrogenated amorphous silicon germanium (a-SiGe:H) layers that make up the graded part of the intrinsic layer near the interfaces of a-SiGe:H solar cells. Therefore the graded part is approached with a ‘staircase’ bandgap profile, consisting of three layers within which the material properties are constant. Calibrated model parameters are obtained by matching simulation results of material properties of intrinsic a-SiGe:H single layers to measurements. Using the obtained model parameter sets subsequent simulations of p-i-n devices with intrinsic material similar to the single layers are matched to measured current-voltage characteristics. The changes in parameter values are evaluated as a function of optical gap.


1996 ◽  
Vol 420 ◽  
Author(s):  
J. Furlan ◽  
P. Popović ◽  
F. Smole ◽  
M. Topič

AbstractUsing suitable simplifying approximations inside the particular regions of a p-i a-Si/n c-Si heterojunction solar cell, the analytical expressions for the solar cell current-voltage characteristics are derived showing clearly the dominating first-order effects on solar cell performance. The derived closed form solutions indicate that in the useful forward voltage range the largest dark current component of this cell is the interface recombination current and that the main contribution to the photocurrent comes from the light generated holes in the c-Si substrate layer. The transfer of holes across the intrinsic layer and over the ΔEv barrier is strongly suppressed resulting in an attenuation of solar cell dark and photocurrent.


2019 ◽  
Vol 191 ◽  
pp. 71-77 ◽  
Author(s):  
Wolfram Kwapil ◽  
Sven Wasmer ◽  
Andreas Fell ◽  
Johannes M. Greulich ◽  
Martin C. Schubert

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