Parameter extraction and modelling of the MOS transistor by an equivalent resistance

Sherif M. Sharroush; Yasser S. Abdalla

doi:10.1080/13873954.2020.1857790

Parameter extraction and modelling of the MOS transistor by an equivalent resistance

Mathematical and Computer Modelling of Dynamical Systems ◽

10.1080/13873954.2020.1857790 ◽

2021 ◽

Vol 27 (1) ◽

pp. 50-86

Author(s):

Sherif M. Sharroush ◽

Yasser S. Abdalla

Keyword(s):

Parameter Extraction ◽

Equivalent Resistance ◽

Mos Transistor

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A methodology for MOS transistor mismatch parameter extraction and mismatch simulation

2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353) ◽

10.1109/iscas.2000.858700 ◽

2002 ◽

Cited By ~ 2

Author(s):

T. Serrano-Gotarredona ◽

B. Linares-Barranco

Keyword(s):

Parameter Extraction ◽

Mos Transistor ◽

Transistor Mismatch

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An efficient parameter extraction algorithm for MOS transistor models

IEEE Transactions on Electron Devices ◽

10.1109/16.155879 ◽

1992 ◽

Vol 39 (9) ◽

pp. 2070-2076 ◽

Cited By ~ 30

Author(s):

P.R. Karlsson ◽

K.O. Jeppson

Keyword(s):

Parameter Extraction ◽

Mos Transistor ◽

Extraction Algorithm

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A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications

IEEE Transactions on Electron Devices ◽

10.1109/16.841236 ◽

2000 ◽

Vol 47 (5) ◽

pp. 1018-1027 ◽

Cited By ~ 156

Author(s):

S. Cristoloveanu ◽

D. Munteanu ◽

M.S.T. Liu

Keyword(s):

Parameter Extraction ◽

Mos Transistor ◽

Operation Parameter

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Nonlinear Transistor Model Parameter Extraction Techniques

10.1017/cbo9781139014960 ◽

2009 ◽

Cited By ~ 21

Keyword(s):

Parameter Extraction ◽

Extraction Techniques ◽

Model Parameter ◽

Transistor Model

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Low temperature behaviour of channel transit time constant in MOS transistor

IEE Proceedings G Circuits Devices and Systems ◽

10.1049/ip-g-2.1992.0017 ◽

1992 ◽

Vol 139 (1) ◽

pp. 104 ◽

Cited By ~ 1

Author(s):

A. Srivastava

Keyword(s):

Low Temperature ◽

Time Constant ◽

Transit Time ◽

Temperature Behaviour ◽

Mos Transistor

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MOSFET modeling and parameter extraction for low temperature analog circuit design

Journal de Physique IV (Proceedings) ◽

10.1051/jp420020035 ◽

2002 ◽

Vol 12 (3) ◽

pp. 51-56 ◽

Cited By ~ 6

Author(s):

P. Martin ◽

M. Bucher ◽

C. Enz

Keyword(s):

Low Temperature ◽

Circuit Design ◽

Analog Circuit ◽

Parameter Extraction ◽

Analog Circuit Design

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NOVEL CALCULATIONS IN THE FIELD OF ACCURATE ANALYTICAL MOS TRANSISTOR MODELLING

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1988451 ◽

1988 ◽

Vol 49 (C4) ◽

pp. C4-249-C4-252 ◽

Cited By ~ 1

Author(s):

L. LAUWERS ◽

K. DE MEYER

Keyword(s):

Mos Transistor

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Method for Micro-motion Target Recognition and Motion Parameter Extraction Based on Time-frequency Analysis

JOURNAL OF ELECTRONICS INFORMATION TECHNOLOGY ◽

10.3724/sp.j.1146.2009.01127 ◽

2010 ◽

Vol 32 (8) ◽

pp. 1812-1817 ◽

Cited By ~ 2

Author(s):

Lu Wang ◽

Hong-wei Liu

Keyword(s):

Frequency Analysis ◽

Target Recognition ◽

Parameter Extraction ◽

Motion Parameter ◽

Time Frequency Analysis ◽

Time Frequency ◽

Micro Motion

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Parameter Extraction of Schottky Solar Cell in Wide Temperature Range Using Genetic Algorithms

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.10(6).06046 ◽

2018 ◽

Vol 10 (6) ◽

pp. 06046-1-06046-4 ◽

Cited By ~ 1

Author(s):

B. Lakehal ◽

◽

A. Dendouga ◽

Keyword(s):

Genetic Algorithms ◽

Solar Cell ◽

Wide Temperature Range ◽

Parameter Extraction ◽

Temperature Range

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Device Parameter Extraction for Loss Analysis of Silicon Solar Cells Based on Intelligent Model Fitting

Energy Procedia ◽

10.1016/j.egypro.2018.09.012 ◽

2018 ◽

Vol 150 ◽

pp. 21-27 ◽

Cited By ~ 1

Author(s):

Jian Wei Ho ◽

Johnson Wong ◽

Percis Teena Christopher Subhodayam ◽

Kwan Bum Choi ◽

Divya Ananthanarayanan ◽

...

Keyword(s):

Solar Cells ◽

Model Fitting ◽

Parameter Extraction ◽

Silicon Solar Cells ◽

Loss Analysis ◽

Device Parameter ◽

Intelligent Model

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