Direct lattice absorption associated with shallow impurity levels

The conditions under which direct lattice sums of electric potential, field, and field gradient converge are discussed. The analogous conditions under which differences in these lattice sums, for two points in the crystal, converge are also outlined. These conditions are applied to direct lattice sum calculations in crystals in which the ideal lattice is distorted close to a defect of some kind. The conver- gence conditions are then applied to the case of determining the direct lattice sums in crystals in which higher symmetry properties can be invoked, which leads to a knowledge by inspection of the lattice sum at one point in the unit cell.

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Shallow Impurity Absorption Spectroscopy in Isotopically Enriched Silicon

10.1063/1.2729853 ◽

2007 ◽

Cited By ~ 2

Author(s):

M. Steger ◽

A. Yang ◽

D. Karaiskaj ◽

M. L. W. Thewalt ◽

E. E. Haller ◽

...

Keyword(s):

Absorption Spectroscopy ◽

Impurity Absorption ◽

Shallow Impurity

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PHONON BROADENING OF IMPURITY SPECTRAL LINES: II. APPLICATION TO SILICON

Canadian Journal of Physics ◽

10.1139/p63-183 ◽

1963 ◽

Vol 41 (11) ◽

pp. 1823-1835 ◽

Cited By ~ 39

Author(s):

Robert Barrie ◽

Kyoji Nishikawa

Keyword(s):

General Theory ◽

Spectral Lines ◽

Deformation Potential ◽

Phonon Interaction ◽

Potential Description ◽

Electron Phonon Interaction ◽

Shallow Impurity ◽

Hydrogenic Model ◽

Numerical Estimations

The general theory of the phonon broadening of impurity spectral lines discussed in an earlier paper is applied to shallow impurity levels in silicon. With the use of a modified hydrogenic model and a deformation potential description of the electron–phonon interaction, expressions are obtained for typical contributions to the half-widths. Some numerical estimations are made for both acceptor and donor cases and are compared with experiment.

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Shallow-impurity-assisted transitions in the course of submillimeter magnetoabsorption of strained Ge/GeSi(111) quantum-well heterostructures

Physics of the Solid State ◽

10.1134/1.1641938 ◽

2004 ◽

Vol 46 (1) ◽

pp. 125-129 ◽

Cited By ~ 2

Author(s):

V. Ya. Aleshkin ◽

D. B. Veksler ◽

V. I. Gavrilenko ◽

I. V. Erofeeva ◽

A. V. Ikonnikov ◽

...

Keyword(s):

Quantum Well ◽

Shallow Impurity

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Direct lattice calculation of m_d - m_u

10.22323/1.105.0243 ◽

2011 ◽

Author(s):

Andre Walker-Loud

Keyword(s):

Lattice Calculation ◽

Direct Lattice

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Electrostatic lattice energy in ionic crystals: optimization of the convergence of Ewald series

Acta Crystallographica Section A ◽

10.1107/s0567739478001990 ◽

1978 ◽

Vol 34 (6) ◽

pp. 974-979 ◽

Cited By ~ 61

Author(s):

M. Catti

Keyword(s):

Lattice Energy ◽

Rates Of Convergence ◽

Unit Cell ◽

Group Symmetry ◽

Cube Root ◽

Cell Dimensions ◽

Madelung Energy ◽

Direct Lattice ◽

Unit Cell Dimensions ◽

Theoretical Results

Ewald's method is reconsidered to express the dependence of Madelung energy on the ionic charges explicitly, also taking into account the space-group symmetry of the structure. Upper bounds for the residues of the two partial series have been calculated by integral approximation; that relative to the direct-lattice series is shown to depend on the cube root of the unit-cell volume. The optimum value of the parameter A, which equalizes the rates of convergence of the two sums and minimizes the total number of terms, has been determined numerically for a given termination error and for a range of unit-cell dimensions. Theoretical results are tested by calculations on some specific crystal structures.

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