The theory of the ordinary Hall coefficient of iron at low temperatures

1968 ◽  
Vol 1 (4) ◽  
pp. 1052-1064 ◽  
Author(s):  
M G Cottam ◽  
R B Stinchcombe
Keyword(s):  
Hall Coefficient ◽  
Low Temperatures

LOW-TEMPERATURE NORMAL-STATE HALL EFFECT IN HIGH-TcBi2Sr2-xLaxCuO6+δ REVEALED BY 60 T MAGNETIC FIELDS

2002 ◽  
Vol 16 (20n22) ◽  
pp. 3171-3174
Author(s):  
F. F. BALAKIREV ◽  
J. B. BETTS ◽  
G. S. BOEBINGER ◽  
S. ONO ◽  
Y. ANDO ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Hall Coefficient ◽  
Normal State ◽  
Ground State ◽  
Low Temperatures ◽  
Optimal Doping ◽  
Underdoped Sample ◽  
Additional Support

We report low-temperature Hall coefficient in the normal state of the high-Tc superconductor Bi 2 Sr 2-x La x CuO 6+δ. The Hall coefficient was measured down to 0.5 K by suppressing superconductivity with a 60 T pulsed magnetic field. The carrier concentration was varied from overdoped to underdoped regimes by partially substituting Sr with La in a set of five samples. The observed saturation of the Hall coefficient at low temperatures suggests the ability to extract the carrier concentration of each sample. The most underdoped sample exhibits a diverging Hall coefficient at low temperatures, consistent with a depletion of carriers in the insulating ground state. The Hall number exhibits a sharp peak providing additional support for the existence of a phase boundary at the optimal doping.

The theory of the magneto-resistance effects in polar semi-conductors

1955 ◽  
Vol 227 (1169) ◽  
pp. 241-251 ◽  
Keyword(s):  
Magnetic Field ◽  
Field Strength ◽  
Magnetic Field Strength ◽  
Hall Coefficient ◽  
Low Temperatures ◽  
Magneto Resistance

General expressions are obtained for the Hall coefficient and transverse magneto-resistance effect in polar semi-conductors, and the variation of these effects with temperature, magnetic field strength and degeneracy of the electrons is discussed. At low temperatures the magneto-resistance effect may become very large, contrary to the prediction of the freepath theory.

ELECTRICAL RESISTIVITY, HALL COEFFICIENT, AND THERMOELECTRIC POWER OF AuSb2 AND Cu2Sb

1964 ◽  
Vol 42 (3) ◽  
pp. 519-525 ◽  
Author(s):  
W. B. Pearson
Keyword(s):  
Electrical Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Hall Coefficient ◽  
Low Temperatures ◽  
Room Temperature ◽  
Iron Impurity

The electrical conductivity and absolute thermoelectric power of AuSb2 and Cu2Sb have been measured between 2.5° and 300 °K. Room-temperature Hall coefficients were also determined. Iron impurity causes a giant diffusion thermoelectric power at low temperatures in the compound Cu2Sb, as it has previously been found to do in Cu, Ag, and Au.

scholarly journals Positive Hall coefficient observed in single-crystalNd2−xCexCuO4−δat low temperatures

1991 ◽  
Vol 43 (4) ◽  
pp. 3020-3025 ◽  
Author(s):  
Z. Z. Wang ◽  
T. R. Chien ◽  
N. P. Ong ◽  
J. M. Tarascon ◽  
E. Wang
Keyword(s):  
Hall Coefficient ◽  
Low Temperatures

Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers

2019 ◽  
Vol 963 ◽  
pp. 324-327 ◽  
Author(s):  
Hideharu Matsuura ◽  
Rinya Nishihata ◽  
Akinobu Takeshita ◽  
Tatsuya Imamura ◽  
Kota Takano ◽  
...  
Keyword(s):  
Hall Coefficient ◽  
Low Temperatures ◽  
Conduction Mechanism ◽  
Amorphous Semiconductors ◽  
The Other ◽  
Hopping Conduction ◽  
Sign Inversion ◽  
Dominant Conduction Mechanism ◽  
Change Temperature ◽  
Band Conduction

The temperature dependencies of the resistivity and Hall coefficient for heavily Al-doped 4H-SiC epilayers with Al concentration (CAl) higher than 2×1019 cm-3 were investigated. The signs of measured Hall coefficients (RH) change from positive to negative at low temperatures. For the epilayers with CAl < 3×1019 cm-3 the sign inversion occurred in the hopping conduction region, which was reported to be explicable using the model for amorphous semiconductors. For the epilayers with CAl > 3×1019 cm-3, on the other hand, the sign inversion occurred in the band conduction region, which is a striking feature, because the movement of free holes in the valence band should make RH positive. The sign-inversion temperature increased with increasing CAl, while the dominant-conduction-mechanism-change temperature was almost independent of CAl.

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