Elastic behavior, pressure-induced doping and superconducting transition temperature of GdBa2Cu3O7-x

Doping superconductors are known to vary the superconducting transition temperature TC depending on the degree of holes or electrons introduced in a system. In this study, we report how pressure-induced hole doping influences the TC of GdBa2Cu3O7-x superconducting perovskite. The study was carried out in the framework of density functional theory (DFT) using the Quantum espresso code. Ultrasoft pseudopotential with generalized gradient approximation (GGA) and local density approximation (LDA) functional was used to calculate the ground state energy using the plane waves (PW). The stability criterion was satisfied from the calculated elastic constants. The BCS theory and the Mc Millan’s equation was used to calculate the TC of the material at different conditions of pressure. The underdoped regime where the holes were less than those at optimal doping was found to be below 20 GPa of doping pressure. Optimal doping where the material achieved the highest TC (max) ~ 20 GPa of the doping pressure. Beyond the pressure of ~20 GPa was the over doping regime where a decrease in TC was recorded. The highest calculated TC (max) was ~141.16 K. The results suggest that pressure of ~20 GPa gave rise to the highest TC in the study.

Phonons, electrons and thermal transport in Planckian high Tc materials

The room-temperature thermal diffusivity of high Tc materials is dominated by phonons. This allows the scattering of phonons by electrons to be discerned. We argue that the measured strength of this scattering suggests a converse Planckian scattering of electrons by phonons across the room-temperature phase diagram of these materials. Consistent with this conclusion, the temperature derivative of the resistivity of strongly overdoped cuprates is noted to show a kink at a little below 200 K that we argue should be understood as the onset of a high-temperature Planckian T-linear scattering of electrons by classical phonons. This kink continuously disappears toward optimal doping, even while strong scattering of phonons by electrons remains visible in the thermal diffusivity, sharpening the long-standing puzzle of the lack of a feature in the T-linear resistivity at optimal doping associated with the onset of phonon scattering.

Optimal electronic doping in p-wave superconductors

Recently, within a generalized Hubbard model which includes correlated nearest (∆t) and next-nearest hopping interactions (∆t_3 ), a comparative study between d- and s*- wave superconducting ground states on a square lattice was performed. It was found that the critical temperature of transition T_c (n), as a function of the electron concentration n, reaches a maximum (T_(c-max) at a given optimal doping (n_op) for each value of the ratio (t’)⁄t, where t and t’ are the tight-binding nearest and next-nearest hopping parameter of a square lattice, respectively. From all values obtained for T_(c-max) ((t’)⁄(t,n_op) a global minimum one was encountered for both symmetries. Likewise, in the same space, a minimal ground state energy E_g was also obtained. For d-wave channel both minima are localized around the same optimal doping, however, for s* symmetry, the two minima are located at different electron concentrations. In this work, we additionally study how the p-wave ground-state energy and the critical temperature depend on the hoppings parameters and the electron concentration. The results show that for p-wave, minimum global values of and in the space do exist too, they are found around half filling but, as occurs for s*- wave, the minimum of T_(c-max) does not occur at the same point as . Moreover, we present a ground-state phase diagram in the space (t’)⁄(t,n_op) where it is possible to find zones of coexistence and competition between the s*-, p- and d-wave symmetries. Also, an analysis of the shape of the Fermi surface and the single-particle energy, as functions of the wave vector of an electron in the Cooper pair, has been done for different regions of the mentioned space.

Emerging symmetric strain response and weakening nematic fluctuations in strongly hole-doped iron-based superconductors

Electronic nematicity is often found in unconventional superconductors, suggesting its relevance for electronic pairing. In the strongly hole-doped iron-based superconductors, the symmetry channel and strength of the nematic fluctuations, as well as the possible presence of long-range nematic order, remain controversial. Here, we address these questions using transport measurements under elastic strain. By decomposing the strain response into the appropriate symmetry channels, we demonstrate the emergence of a giant in-plane symmetric contribution, associated with the growth of both strong electronic correlations and the sensitivity of these correlations to strain. We find weakened remnants of the nematic fluctuations that are present at optimal doping, but no change in the symmetry channel of nematic fluctuations with hole doping. Furthermore, we find no indication of a nematic-ordered state in the AFe2As2 (A = K, Rb, Cs) superconductors. These results revise the current understanding of nematicity in hole-doped iron-based superconductors.

Reinforcing Increase of ΔTc in MgB2 Smart Meta-Superconductors by Adjusting the Concentration of Inhomogeneous Phases

Incorporating with inhomogeneous phases with high electroluminescence (EL) intensity to prepare smart meta-superconductors (SMSCs) is an effective method for increasing the superconducting transition temperature (Tc) and has been confirmed in both MgB2 and Bi(Pb)SrCaCuO systems. However, the increase of ΔTc (ΔTc = Tc ‒ Tcpure) has been quite small because of the low optimal concentrations of inhomogeneous phases. In this work, three kinds of MgB2 raw materials, namely, aMgB2, bMgB2, and cMgB2, were prepared with particle sizes decreasing in order. Inhomogeneous phases, Y2O3:Eu3+ and Y2O3:Eu3+/Ag, were also prepared and doped into MgB2 to study the influence of doping concentration on the ΔTc of MgB2 with different particle sizes. Results show that reducing the MgB2 particle size increases the optimal doping concentration of inhomogeneous phases, thereby increasing ΔTc. The optimal doping concentrations for aMgB2, bMgB2, and cMgB2 are 0.5%, 0.8%, and 1.2%, respectively. The corresponding ΔTc values are 0.4, 0.9, and 1.2 K, respectively. This work open a new approach to reinforcing increase of ΔTc in MgB2 SMSCs.

A Novel LDMOS with Ultralow Specific on-Resistance and Improved Switching Performance

A stepped split triple-gate SOI LDMOS with P/N strip (P/N SSTG SOI LDMOS) is proposed, which has ultralow specific on-resistance (Ron,sp) and low switching losses. The proposed device has a triple-gate (TG) and stepped split gates (SSGs). P strip, N-drift and oxide trench are alternately arranged in the Z direction. Meanwhile, the SSGs are located in the oxide trench of the N-drift region and are distributed in steps. Firstly, the TG increases the channel width (Wch) and has the effect of modulating current distribution, resulting in lower Ron,sp and higher transconductance (gm). Secondly, the SSGs serve as the field plate to assist the depletion of the N-drift region, increasing the optimal doping concentration of the N-drift region (Nd-opt) and further reducing the Ron,sp. Moreover, the SSGs also have the effect of modulating the electric field distribution to maintain a high breakdown voltage (BV). Meanwhile, gate-drain charge (QGD) and switching losses are reduced on account of the introduction of the SSGs. Thirdly, in the off-state, the P strip and SSGs multidimensional assisted depletion of the N-drift region, which greatly increases the Nd-opt. The highly doped N-drift region provides a low-resistance path for the current, which also further reduces Ron,sp. Compared with triple-gate (TG) SOI LDMOS with almost equal breakdown voltage, the Ron,sp and QGD of P/N SSTG SOI LDMOS are reduced by 62% and 63%, respectively.

A comparison of optimal doping behaviors between d- and s*-wave superconducting ground states

In a previous work reported in this journal, the thermodynamical properties of d-wave superconducting ground states close to half filling were obtained by using a generalized Hubbard model.

Temperature-Independent Cuprate Pseudogap from Planar Oxygen NMR

Planar oxygen nuclear magnetic resonance (NMR) relaxation and shift data from all cuprate superconductors available in the literature are analyzed. They reveal a temperature-independent pseudogap at the Fermi surface, which increases with decreasing doping in family-specific ways, i.e., for some materials, the pseudogap is substantial at optimal doping while for others it is nearly closed at optimal doping. The states above the pseudogap, or in its absence are similar for all cuprates and doping levels, and Fermi liquid-like. If the pseudogap is assumed exponential it can be as large as about 1500 K for the most underdoped systems, relating it to the exchange coupling. The pseudogap can vary substantially throughout a material, being the cause of cuprate inhomogeneity in terms of charge and spin, so consequences for the NMR analyses are discussed. This pseudogap appears to be in agreement with the specific heat data measured for the YBaCuO family of materials, long ago. Nuclear relaxation and shift show deviations from this scenario near Tc, possibly due to other in-gap states.

Superconductivity mediated by polar modes in ferroelectric metals

The occurrence of superconductivity in doped SrTiO3 at low carrier densities points to the presence of an unusually strong pairing interaction that has eluded understanding for several decades. We report experimental results showing the pressure dependence of the superconducting transition temperature, Tc, near to optimal doping that sheds light on the nature of this interaction. We find that Tc increases dramatically when the energy gap of the ferroelectric critical modes is suppressed, i.e., as the ferroelectric quantum critical point is approached in a way reminiscent to behaviour observed in magnetic counterparts. However, in contrast to the latter, the coupling of the carriers to the critical modes in ferroelectrics is predicted to be small. We present a quantitative model involving the dynamical screening of the Coulomb interaction and show that an enhancement of Tc near to a ferroelectric quantum critical point can arise due to the virtual exchange of longitudinal hybrid-polar-modes, even in the absence of a strong coupling to the transverse critical modes.