A metal-insulator transition in the impurity band of n-type GaAs induced by loss of dimension

1977 ◽  
Vol 10 (8) ◽  
pp. L173-L177 ◽  
Author(s):  
M Pepper
Keyword(s):  
Impurity Band ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Metal-insulator transition and the character of the hole impurity bands in ferromagnetic GaMnAs disordered dilute magnetic semiconductor

2008 ◽  
Vol 1118 ◽  
Author(s):  
R. da Silva Neves ◽  
A. Ferreira da Silva ◽  
R. Kishore
Keyword(s):  
Dilute Magnetic Semiconductor ◽  
Critical Concentration ◽  
Mean Field ◽  
Magnetic Semiconductor ◽  
Impurity Band ◽  
Insulator Transition ◽  
Ferromagnetic Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
The Mean

ABSTRACTThe study of ferromagnetic transition of Ga1-xMnxAs dilute magnetic semiconductor (DMS) is much of interest mainly due to the potential application in spintronic devices. Based on the mean field approach we present the average contribution of the hole spins by considering the holes in an impurity band (IB) and the critical concentration for the metal-insulator transition (MIT) in this semiconductor. In order to calculate the mean configuration of spins of impurities Mn+2 we use a formalism proposed for a spatial disordered system. The results for the metallic densities around the MIT transition are compared to experimental results and other theoretical findings.

Optical evidence for the impurity band nature of the metal-insulator transition in GaAs

1988 ◽  
Vol 66 (1) ◽  
pp. 23-27 ◽  
Author(s):  
Ming-Way Lee ◽  
D. Romero ◽  
H.D. Drew ◽  
M. Shayegan ◽  
B.S. Elman
Keyword(s):  
Impurity Band ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Optical Evidence
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