Impurity‐band transport near the metal–insulator transition in ZnSe epilayers grown by molecular beam epitaxy

1990 ◽  
Vol 56 (26) ◽  
pp. 2669-2671 ◽  
Author(s):  
T. Marshall ◽  
J. Gaines
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Impurity Band ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Correlation between strain and the metal–insulator transition in epitaxial V2O3 thin films grown by Molecular Beam Epitaxy

2012 ◽  
Vol 520 (14) ◽  
pp. 4730-4733 ◽  
Author(s):  
L. Dillemans ◽  
R.R. Lieten ◽  
M. Menghini ◽  
T. Smets ◽  
J.W. Seo ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Metal-insulator transition and the character of the hole impurity bands in ferromagnetic GaMnAs disordered dilute magnetic semiconductor

2008 ◽  
Vol 1118 ◽  
Author(s):  
R. da Silva Neves ◽  
A. Ferreira da Silva ◽  
R. Kishore
Keyword(s):  
Dilute Magnetic Semiconductor ◽  
Critical Concentration ◽  
Mean Field ◽  
Magnetic Semiconductor ◽  
Impurity Band ◽  
Insulator Transition ◽  
Ferromagnetic Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
The Mean

ABSTRACTThe study of ferromagnetic transition of Ga1-xMnxAs dilute magnetic semiconductor (DMS) is much of interest mainly due to the potential application in spintronic devices. Based on the mean field approach we present the average contribution of the hole spins by considering the holes in an impurity band (IB) and the critical concentration for the metal-insulator transition (MIT) in this semiconductor. In order to calculate the mean configuration of spins of impurities Mn+2 we use a formalism proposed for a spatial disordered system. The results for the metallic densities around the MIT transition are compared to experimental results and other theoretical findings.

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