Nature and scaling properties of the intermediate phase of the impurity band metal–insulator transition

1999 ◽  
Vol 109 (5) ◽  
pp. 301-304 ◽  
Author(s):  
J.C. Phillips
Keyword(s):  
Intermediate Phase ◽  
Impurity Band ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Scaling Properties

scholarly journals Metal-insulator transition and the character of the hole impurity bands in ferromagnetic GaMnAs disordered dilute magnetic semiconductor

2008 ◽  
Vol 1118 ◽  
Author(s):  
R. da Silva Neves ◽  
A. Ferreira da Silva ◽  
R. Kishore
Keyword(s):  
Dilute Magnetic Semiconductor ◽  
Critical Concentration ◽  
Mean Field ◽  
Magnetic Semiconductor ◽  
Impurity Band ◽  
Insulator Transition ◽  
Ferromagnetic Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
The Mean

ABSTRACTThe study of ferromagnetic transition of Ga1-xMnxAs dilute magnetic semiconductor (DMS) is much of interest mainly due to the potential application in spintronic devices. Based on the mean field approach we present the average contribution of the hole spins by considering the holes in an impurity band (IB) and the critical concentration for the metal-insulator transition (MIT) in this semiconductor. In order to calculate the mean configuration of spins of impurities Mn+2 we use a formalism proposed for a spatial disordered system. The results for the metallic densities around the MIT transition are compared to experimental results and other theoretical findings.

Optical evidence for the impurity band nature of the metal-insulator transition in GaAs

1988 ◽  
Vol 66 (1) ◽  
pp. 23-27 ◽  
Author(s):  
Ming-Way Lee ◽  
D. Romero ◽  
H.D. Drew ◽  
M. Shayegan ◽  
B.S. Elman
Keyword(s):  
Impurity Band ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Optical Evidence

scholarly journals Non-universal current flow near the metal-insulator transition in an oxide interface

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Eylon Persky ◽  
Naor Vardi ◽  
Ana Mafalda R. V. L. Monteiro ◽  
Thierry C. van Thiel ◽  
Hyeok Yoon ◽  
...  
Keyword(s):  
Scaling Laws ◽  
Current Flow ◽  
Electronic System ◽  
Insulator Transition ◽  
Structural Domain ◽  
Oxide Interface ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Scaling Properties ◽  
Structural And Electronic Properties

AbstractIn systems near phase transitions, macroscopic properties often follow algebraic scaling laws, determined by the dimensionality and the underlying symmetries of the system. The emergence of such universal scaling implies that microscopic details are irrelevant. Here, we locally investigate the scaling properties of the metal-insulator transition at the LaAlO3/SrTiO3 interface. We show that, by changing the dimensionality and the symmetries of the electronic system, coupling between structural and electronic properties prevents the universal behavior near the transition. By imaging the current flow in the system, we reveal that structural domain boundaries modify the filamentary flow close to the transition point, preventing a fractal with the expected universal dimension from forming.

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