Role of deposition parameters on the photovoltaic quality of amorphous silicon germanium alloys: correlation of microstructure with defect density and electronic transport

2001 ◽  
Vol 34 (16) ◽  
pp. 2475-2481 ◽  
Author(s):  
Sukti Hazra ◽  
A R Middya ◽  
Swati Ray ◽  
C Malten ◽  
F Finger
Keyword(s):  
Amorphous Silicon ◽  
Electronic Transport ◽  
Silicon Germanium ◽  
Defect Density ◽  
Deposition Parameters ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

Thermally-Induced Change of Conductivity and Defect Density in Amorphous Silicon-Germanium Alloys

1990 ◽  
Vol 192 ◽  
Author(s):  
Tatsuo Shimizu ◽  
Xixiang Xu ◽  
Hiroyuki Sasaki ◽  
Hui Yan ◽  
Akiharu Morimoto ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Defect Density ◽  
Equilibrium Temperature ◽  
Exponential Form ◽  
Thermally Induced ◽  
Neutral Defect ◽  
Fast Cooling ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

ABSTRACTThermally-induced metastable phenomena in amorphous silicon-germanium alloys were studied by conductivity and ESR measurements. Fast cooling from 250 °C reduced both dark- and photo-conductivities by a factor of 3–4 while the neutral defect density remained unchanged. Thermally-induced change in conductivity relaxed towards equilibrium with a stretched exponential form. The thermal equilibrium temperature was found to be roughly proportional to the optical gap for a–Si:H, a–Sii−xCx:H, a–Si1−xNx:H and a–Si1−xGex:H:F.

Metastable Defects in the Amorphous Silicon-Germanium Alloys

2003 ◽  
Vol 762 ◽  
Author(s):  
J. David Cohen
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Dangling Bonds ◽  
Annealing Behavior ◽  
Fundamental Properties ◽  
Silicon Materials ◽  
Salient Features ◽  
The Individual ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

AbstractThis paper first briefly reviews a few of the early studies that established some of the salient features of light-induced degradation in a-Si,Ge:H. In particular, I discuss the fact that both Si and Ge metastable dangling bonds are involved. I then review some of the recent studies carried out by members of my laboratory concerning the details of degradation in the low Ge fraction alloys utilizing the modulated photocurrent method to monitor the individual changes in the Si and Ge deep defects. By relating the metastable creation and annealing behavior of these two types of defects, new insights into the fundamental properties of metastable defects have been obtained for amorphous silicon materials in general. I will conclude with a brief discussion of the microscopic mechanisms that may be responsible.

Thermal relaxation of the electric conductivity in amorphous silicon-germanium alloys

1989 ◽  
Vol 40 (9) ◽  
pp. 6424-6427 ◽  
Author(s):  
Jeffrey Zhaohuai Liu ◽  
V. Chu ◽  
D. S. Shen ◽  
D. Slobodin ◽  
S. Wagner
Keyword(s):  
Amorphous Silicon ◽  
Electric Conductivity ◽  
Silicon Germanium ◽  
Thermal Relaxation ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys
Sign in / Sign up

Export Citation Format

Share Document