Thermally-Induced Change of Conductivity and Defect Density in Amorphous Silicon-Germanium Alloys
Keyword(s):
ABSTRACTThermally-induced metastable phenomena in amorphous silicon-germanium alloys were studied by conductivity and ESR measurements. Fast cooling from 250 °C reduced both dark- and photo-conductivities by a factor of 3–4 while the neutral defect density remained unchanged. Thermally-induced change in conductivity relaxed towards equilibrium with a stretched exponential form. The thermal equilibrium temperature was found to be roughly proportional to the optical gap for a–Si:H, a–Sii−xCx:H, a–Si1−xNx:H and a–Si1−xGex:H:F.
2001 ◽
Vol 34
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pp. 2475-2481
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1991 ◽
Vol 30
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pp. L1235-L1237
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2008 ◽
Vol 354
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pp. 2126-2130
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2003 ◽
Vol 150
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pp. 345
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