Dielectric response of fully and partially depleted ferroelectric thin films and inversion of the thickness effect

2013 ◽  
Vol 46 (12) ◽  
pp. 125301 ◽  
Author(s):  
I B Misirlioglu ◽  
M Yildiz
2002 ◽  
Vol 17 (2) ◽  
pp. 275-278 ◽  
Author(s):  
Soma Chattopadhyay ◽  
B. M. Nichols ◽  
Jin-Ha Hwang ◽  
T. O. Mason ◽  
B. W. Wessels

The dielectric response of KNbO3 epitaxial ferroelectric thin films was measured as a function of bias, frequency, and temperature. Thin films with a thickness of 80 to 350 nm were deposited on spinel substrates by low-pressure metalorganic chemical vapor deposition. Bias dependence measurements showed hysteresis in the dielectric response. The dielectric constant decreased with bias, and the tunability was calculated to be between 35% and 42% for an applied field of 7 MV/cm. The frequency dependence of the dielectric constant followed a power law. A pronounced thickness effect was observed in the dielectric response, especially at the Curie temperature. With decreasing thickness, the dielectric constant and the loss tangent decreased. A diffuse ferroelectric phase transition was observed for films with a thickness less than 350 nm.


2011 ◽  
Vol 519 (18) ◽  
pp. 6021-6025 ◽  
Author(s):  
Jianjun Li ◽  
Ping Li ◽  
Guojun Zhang ◽  
Jun Yu ◽  
Yunyi Wu ◽  
...  

2006 ◽  
Vol 48 (6) ◽  
pp. 1179-1181 ◽  
Author(s):  
R. A. Laletin ◽  
A. I. Burkhanov ◽  
L. V. Zhoga ◽  
A. V. Shil’nikov ◽  
A. S. Sigov ◽  
...  

2003 ◽  
Vol 288 (1) ◽  
pp. 169-185 ◽  
Author(s):  
J. Petzelt ◽  
P. Kužel ◽  
I. Rychetský ◽  
A. Pashkin ◽  
T. Ostapchuk

2008 ◽  
Vol 103 (7) ◽  
pp. 074112 ◽  
Author(s):  
Jon F. Ihlefeld ◽  
Aaron M. Vodnick ◽  
Shefford P. Baker ◽  
William J. Borland ◽  
Jon-Paul Maria

2000 ◽  
Vol 77 (16) ◽  
pp. 2596-2598 ◽  
Author(s):  
N. A. Pertsev ◽  
V. G. Koukhar ◽  
R. Waser ◽  
S. Hoffmann

1992 ◽  
Vol 1 (1) ◽  
pp. 129-146 ◽  
Author(s):  
M. Sayer ◽  
A. Mansingh ◽  
A. K. Arora ◽  
A. Lo

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