Deposition-Parameter-Determined Resistive Switching Characteristics in TiOx/Pb(Zr0.52Ti0.48)O3Bilayers

Pb(Zr0.52Ti0.48)O3(PZT) ferroelectric thin films were deposited epitaxially, by pulsed laser deposition, on (001) SrTiO3substrates buffered with La0.7Sr0.3MnO3(LSMO) electrodes. AmorphousTiOxthin films were deposited on top of PZT at various temperatures and oxygen chamber pressures. Bipolar resistive switching characteristics of Pt/TiOx/PZT/LSMO heterostructures are found to vary withTiOxdeposition parameters, from an interface controlled ferroelectric diode behavior to a bulk-controlled conductive filament behavior. The observations are discussed in terms of the concentration and migration of oxygen vacancies in theTiOxlayer.

Monte Carlo Simulation of Ferroelectric Behavior in PZT Films by Using a Stress Dependent DIFFOUR Hamiltonian

In this work the polarization and hysteresis response of Lead Zirconate Titanate (PZT) ferroelectric thin films was studied in relation to the variation on temperature, stress, electric field and the content of non-ferroelectric impurities by using a Monte Carlo simulation. The simulation was basedon a DIFFOUR Hamiltonian that takes into account the effect of uniaxial stress, in addition to the nearest neighbor dipoles interaction and the effect of an external electric field. The obtained results for hysteresis loops and polarization curves correspond with reported experimental data for this material.

Preparation of PZT Ferroelectric Thin Films by Sol-Gel Process

Sol-gel method is used for the formation of Pb(Zr0.63Ti0.37)O3(PZT) thin films. The initial films were formed with spin coating sol solution on silicon wafer and drying coated wet sol film at 300°C for 5min. This process was repeated for 1-4 times to obtain 4 initial films with different thicknesses. 4 initial films were annealed at 500°C for 2h to obtain PZT ceramics films. The morphologies of the surface and cross-section of PZT films were observed with a scanning electronic microscope (SEM). The phase structures of PZT films were analyzed using an X-ray diffraction meter (XRD). Experimental results show that PZT film prepared by coating wet sol on silicon once can be high smooth and compact film.

Research on PMnN-PZT Ferroelectric Thin Films on Silicon Substrates

The PZT-based ferroelectric thin films own excellent properties, such as good ferroelectricity and excellent piezoelectricity, and the ternary compound PZT-based thin films especially own more excellent properties, which are available to be widely applied in the fabrications of electromechanical devices. However, how to deposit multi-composition PZT-based thin films is a difficult technology. In this paper, the Pb(Mn1/3,Nb2/3)O3-PbZrO3- PbTiO3((PMnN-PZT)) ternary compound thin films are studied on, The thin films are deposited on Si substrates by the magnetron sputtering method, in which the same ratio of PZ/PT=52:48(PZT(52/48)) and the heterostructure substrates of SrRuO3(SRO)/Pt(111)/Ti /SiO2/Si(100) are adopted, and the quench method is always used after the depositions for the post heat treatments. The lattice structures, the surface and the ferroelectricity of thin films are characterized. The results show that the doping of PMnN with 6% mol percent is proper to obtain excellent PMnN-PZT ferroelectric thin films, and the doping of PMnN effectively improve the ferroelectricity of PZT thin films.

In Situ X-Ray Reflectivity Study of Imprint in Ferroelectric Thin Films

The structural origin of imprint in Pb(Zr,Ti)O3 (PZT) ferroelectric thin films derived by chemical solution deposition with Pt top and bottom electrodes was studied by in-situ high-resolution X-ray specular reflectivity of synchrotron radiation. Global structural parameters of density, thickness, and surface or interface roughness of each component layer in the thin film sample were obtained. No generation of interfacial layers with a different electron density from PZT and no interface roughening were observed at the interfaces of PZT and Pt during imprint. Thus, the results suggest that the imprint effect is more likely a bulk or electronic defects-related phenomenon.